半导体激光器泵浦功率分布怎么测

半导体泵浦固体激光器（Diode Pump Solid State Laser），是一种用半导体固体激光材料作为工作物质的新型激光器。半导体泵浦固体激光器近年来国际上发展很快，应用也非常广泛。

这是一种高效率、长寿命、光束质量高、稳定性好、结构紧凑小型化的第二代新型固体激光器，已在空间通讯，光纤通信，大气研究，环境科学，医疗器械，光学图象处理，激光打印机等高科技领域有着独具特色的应用前景。

1、阈值条件就是增益等于损耗，损耗相当于一个门槛，增益到了这个门槛就可以振荡了。2、这个还真是不太了解啊，是不是需要同相位？因为激光是单色光，有很强的相干性，所以应该是同相位或者等相位差吧。3、半导体激光器应该是集合半导体特性和激光特性与一身：半导体特性主要表现为功率温度特性和波长温度特性，激光特性当然是单色性，高亮度，相干性等4、DFB激光器就是分布式反馈激光器，内置了布拉格光栅，光栅的作用我们都学过，就是产生极大，这一部分的极大光就会不断增值，其他部分就会衰减，从而达到选单频，窄线宽输出，这个可以到百度百科里边看一下说的还挺明白的。5、LED是发光二极管，与LD一样是半导体器件，最主要的区别就是发射的线宽，LED的光谱线宽很宽，而LD是激光器，线宽是窄的。回答的比较粗糙，希望能对你有所帮助。

Also known as laser diode laser diode (LD). Into the 1980s, it absorbed the physical development of the semiconductor up-to-date results, the use of quantum well (QW) and strained quantum well (SL-QW) structures, such as novelty, the introduction of the refractive index modulation Bragg launchers, as well as to enhance Bragg modulation transmitter The latest technology, as well as the development of the MBE, MOCVD and the CBE, such as crystal growth technology of the new technology, making new epitaxial growth technology to precisely control crystal growth to the accuracy of atomic layer thick, high-quality growth of quantum wells, as well as strained quantum well materials. As a result, production of the LD, the current threshold of a significant decline in conversion efficiency has been greatly improved the power output doubled, significantly longer service life.

A low-power LD

In the field of information technology for the rapid development of low-power LD. For example, for fiber-optic communications and optical switching systems distributed feedback (DFB) and the dynamic single-mode LD, narrow linewidth tunable DFB-LD, such as CD-ROM for information processing technology in the field of visible light Wavelength (such as wavelength of 670nm, 650nm, 630nm The blue-green to red) LD, surface-emitting quantum well, as well as ultra-short laser pulses substantive, which are all treated the development of LD. The development of these devices are: narrow-linewidth single-frequency, high-speed, as well as short-wavelength tunable optical and integrated single-chip, and so on.

B high-power LD

In 1983, a single wavelength of 800nm output power LD more than 100mW, to 1989, 0.1mm-wide LD be reached 3.7W continuous output, and 1cm linear array LD has reached 76W output, the conversion efficiency of 39%. In 1992, the Americans also targets to a new level: 1cm linear array LD CW output power up to 121W, the conversion efficiency of 45%. Now, the output power of 120W, 1500W, 3kW and many other high-power LD have been published. High-efficiency, high power LD array and its rapid development for all-solid-state laser, diode laser that is pumped (LDP) of the rapid development of solid-state laser provides strong.

In recent years, in order to adapt to the EDFA and the EDFL, and other needs of the wavelength of 980nm high-power LD is that there is great development. Fiber Bragg Grating with recently selected frequency for filtering, a significant improvement in the stability of its output, pump effectively improve the efficiency.

And the characteristics of the application: semiconductor diode laser is the most important practical for a class of lasers. Its small size, long life, and a simple injection of current-pumped his way to work with the voltage and current circuit-compatible, which can be integrated with a single. And also can be as high as GHz frequency modulation direct current for high-speed modulation of laser output. As a result of these advantages, the semiconductor diode laser in the laser communications, optical storage, optical gyros, laser printing, as well as radar range, and so on, as well as access to a wide range of applications.

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