功率半导体英文翻译

In addition to improvements in chip performance, the shell packaging technology is also a great breakthrough, IR inversion in the development of field-effect transistor, also known as "FlipFET" on the basis of this year introduced the DirectFET, as shown in Figure 6. Its source and gate inversion result can be directly welded in the printed circuit board, the drain at the top of the weld metal in its shell, if necessary, by the radiator or direct contact with the equipment enclosure. DirectFET size equivalent to the traditional SO-8 plastic (plastic with an area of about 4x5 mm2) shell. In such a small device, the first structure of a double-sided cooling. It is a lead frame, no-lead solder joints of the device, it brought about a series of advantages: it's non-resistor chip package (DFPR) is only 0. 1mW, device thickness of only 0. 7mm, resistance and parasitic inductance have dropped significantly. Such characteristics make it especially suitable for the above-mentioned computer of the latest generation of CPU. In the multi-phase circuits, each with only two of 30 security DirectFET can transfer current. Increase its current rate of 400 per delicate security, the working frequency of 1-2 MHz.

Secondly, you must be focused on power semiconductor devices in the IC direction: as a result of the development of MOSFET and IGBT, and their matching to provide a trigger signal power integrated circuit PIC (Power IC) have also developed rapidly. At that time, also known as MOS gate drive MGD (MOS Gate Driver) or control integrated circuit CIC (Control IC). With the expansion of the scope of application: such as motor drives, lighting, various power supply and so on, CIC of the cultivars have been rapidly increasing. These CIC in the development process

And gradually from a simple function to trigger the special needs of a wide range of applications development. PIC is the earliest that can be used in high voltage IC, therefore, also known as high-voltage IC (HVIC). However, many applications such as communications, computers, portable power supply and so on, they do not require high voltage, but demand for the special needs of the development of application specific integrated circuit. Because of their combination and application of power semiconductor devices, we have the power to include them in a class of semiconductor devices. So now the power semiconductor devices in the family, there are many integrated circuits. Many of these power devices with integrated circuits inside, some outside while the separation of power devices. Judging from this point, the limits of power and microelectronics has become increasingly blurred. If a large number of computer applications in power modulation device voltage LDO (Low Drop Out) is one example. It does not belong to switch applications.

As a result of a large number of integrated circuits into the power semiconductor devices, which consider the power semiconductor integrated circuits and devices to do the same in the chip or device on the development of the natural line of thought. Done in the same chip, the original is the concept of power integrated circuits, but their power often relatively small. Done in the same package, easy to increase power capacity, a number of passive components is also possible to join, here often called multi-chip module (MCM).

IR last year iPOWIR developed is a typical multi-chip module. It will power devices to control the use of integrated circuits, or in combination with pulse-width modulation (PWM) integrated circuit, according to the needs of power supply design, using BGA packaging technology portfolio in the same device (as shown in Figure 7) . Multi-chip device that greatly simplifies the power supply design staff. Components reduces the number and percentage of the area, there has been a lot of performance improvement. iPOWIR development is considered DC-DC conversion of the future. But, in fact, a wide range of applications in other fields, as long as the requirements of further integration, MCM structure and will there will be more and more. Therefore, it is the power semiconductor devices important direction of development.

In the above presentation, the development of MOSFET has been referred to as 4C industry provides an important foundation. 4C industries which, at present it is the most active direction of the product. We can understand: in the communications, computer, consumer electronics and automotive development, will require many, many close contacts and IC of all types of power semiconductor devices. Each of these aspects can be used to introduce a lot of space. Not detailed here.

Add: Conclusion

To sum up, the power semiconductor devices the past few years, constantly changed a lot. So can no longer look at a fixed vision of the development of power semiconductor devices. For example, not simply thyristor power semiconductor devices and an equal sign painting, or drawing an equal sign and discrete devices. Must not power semiconductor devices and microelectronics artificially separated, it seems only semiconductor microelectronics. These will impede the development of power semiconductor devices, in the long run will hinder the development of microelectronic devices. Development strategy in order to avoid the power semiconductor devices as a simple process only to be completed on the low-tech products. And the preferential policies available only to integrated circuit industry. China has not been very good to the development of modern power semiconductor devices, the lack of modern power semiconductor devices is a comprehensive understanding of the factors I am afraid. Information technology to stimulate industrialization in the wave, it is imperative that different semiconductor devices have a balanced development.

Conclusion

To sum up, the power semiconductor devices the past few years, constantly changed a lot. So can no longer look at a fixed vision of the development of power semiconductor devices. For example, not simply thyristor power semiconductor devices and an equal sign painting, or drawing an equal sign and discrete devices. Must not power semiconductor devices and microelectronics artificially separated, it seems only semiconductor microelectronics. These will impede the development of power semiconductor devices, in the long run will hinder the development of microelectronic devices. Development strategy in order to avoid the power semiconductor devices as a simple process only to be completed on the low-tech products. And the preferential policies available only to integrated circuit industry. China has not been very good to the development of modern power semiconductor devices, the lack of modern power semiconductor devices is a comprehensive understanding of the factors I am afraid. Information technology to stimulate industrialization in the wave, it is imperative that different semiconductor devices have a balanced development.

Also known as laser diode laser diode (LD). Into the 1980s, it absorbed the physical development of the semiconductor up-to-date results, the use of quantum well (QW) and strained quantum well (SL-QW) structures, such as novelty, the introduction of the refractive index modulation Bragg launchers, as well as to enhance Bragg modulation transmitter The latest technology, as well as the development of the MBE, MOCVD and the CBE, such as crystal growth technology of the new technology, making new epitaxial growth technology to precisely control crystal growth to the accuracy of atomic layer thick, high-quality growth of quantum wells, as well as strained quantum well materials. As a result, production of the LD, the current threshold of a significant decline in conversion efficiency has been greatly improved the power output doubled, significantly longer service life.

A low-power LD

In the field of information technology for the rapid development of low-power LD. For example, for fiber-optic communications and optical switching systems distributed feedback (DFB) and the dynamic single-mode LD, narrow linewidth tunable DFB-LD, such as CD-ROM for information processing technology in the field of visible light Wavelength (such as wavelength of 670nm, 650nm, 630nm The blue-green to red) LD, surface-emitting quantum well, as well as ultra-short laser pulses substantive, which are all treated the development of LD. The development of these devices are: narrow-linewidth single-frequency, high-speed, as well as short-wavelength tunable optical and integrated single-chip, and so on.

B high-power LD

In 1983, a single wavelength of 800nm output power LD more than 100mW, to 1989, 0.1mm-wide LD be reached 3.7W continuous output, and 1cm linear array LD has reached 76W output, the conversion efficiency of 39%. In 1992, the Americans also targets to a new level: 1cm linear array LD CW output power up to 121W, the conversion efficiency of 45%. Now, the output power of 120W, 1500W, 3kW and many other high-power LD have been published. High-efficiency, high power LD array and its rapid development for all-solid-state laser, diode laser that is pumped (LDP) of the rapid development of solid-state laser provides strong.

In recent years, in order to adapt to the EDFA and the EDFL, and other needs of the wavelength of 980nm high-power LD is that there is great development. Fiber Bragg Grating with recently selected frequency for filtering, a significant improvement in the stability of its output, pump effectively improve the efficiency.

And the characteristics of the application: semiconductor diode laser is the most important practical for a class of lasers. Its small size, long life, and a simple injection of current-pumped his way to work with the voltage and current circuit-compatible, which can be integrated with a single. And also can be as high as GHz frequency modulation direct current for high-speed modulation of laser output. As a result of these advantages, the semiconductor diode laser in the laser communications, optical storage, optical gyros, laser printing, as well as radar range, and so on, as well as access to a wide range of applications.

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