Although some literature that the author created in their respective semiconductor lasers in the important role played by, but the fact is no one on semiconductor laser to the emergence of a complete theoretical basis, nor an early worker for the realization of the study and solve the semiconductor laser All the technology issues. Therefore, it can be that the semiconductor laser is the emergence and development of many co-workers on the crystallization of wisdom.
As early as in September 1953, the U.S. Feng. Newman (John Von Neumann) in his unpublished papers a manuscript in the first exposition in the semiconductor produced by stimulated emission of possibility that can be injected to the PN junction Are in the minority in mind to achieve stimulated emissioncalculated according to the two brilliant transition zone between the radiation rate. Bading concluded Feng 'Newman on the basic theory of semiconductor laser after that. Through various means (for example, to inject a small number of PN junction carrier) disturbance belt electronic price band Hole and the balance of concentration, according to which non-minority-carrier in the compound and a photon. The rate of its radiation can be like amplifiers, with the same frequency of electromagnetic radiation. It should be said to be laser (Liser) the earliest concept of this than Gordon (Corden) and the Andean soup (Towes) reported by the quantum of microwave amplifiers (Maser) to the concept as early as 2001.
Ecsle Normale Superieure and Pierre Aigrain in 1956 had encouraged the U.S. radio company [RCA] Pankove start manufacturing the semiconductor laser. June 1958 in Brussels of an international conference on the statement, first published in the semiconductor be coherent light of the views, but it was not until 1964 he published articles on the theory of semiconductor lasers and experimental work. Soviet Lebedev Physical Institute Basov (Basov), and so on the outstanding contribution of semiconductor lasers, he is the first time in 1958 published an article in the semiconductor raised in the realization of negative-state (that is, population inversion) on the theory . In 1961 they published the first carrier will be injected into the semiconductor PN junction to achieve the "injection laser" exposition and demonstration in the tunnel diodes as high as in Jane and the PN junction to achieve population inversion (which is Produced by stimulated emission of the necessary conditions for) the possibility, but also that active high-density areas around the most active carrier of the border areas on both sides of the refractive index of a difference, creating optical waveguide effect. After these theories to the emergence of semiconductor laser has played a positive role in promoting, Basuo Fu therefore be Nobel Prize. However, in 1963, published by the Basuo Fu, and so on semiconductor laser experiment with the theory of the article is more active semiconductor materials for Ge. And La Vieques (Lax) in 1959 made direct bandgap semiconductor (such as GaAs, InP, etc.) than the indirect bandgap semiconductor (such as Ge, Si, etc.) is more suited to produce stimulated emission of material. This important thesis for the accuracy of which appear later confirmed by the semiconductor laser.
1960 Bell Labs of Wembley (Boyle) and Thomson put forward in parallel with the semiconductor and as a cleavage-feedback resonator, the strengthening of the laser is essential. Laser optical resonator is an integral part.
1961 Bernard (Bernard) and Dulafuge (DM raffo "rg)-use fee. Derived the concept of energy meters in the semiconductor active than in the medium to achieve population inversion conditions on the condition that the following year The success of semiconductor laser research has played an important guiding role of theory.
To sum up, in theory, that should be in the semiconductor laser direct bandgap semiconductor PN junction, with the injection-carrier method by Bernard Dulafuge a condition under the control of population inversion, from electronics and Hole compound generated by the laser radiation in the optical resonant cavity oscillation be enlarged and, finally have a coherent laser output.
激光的产生原理处于粒子数反转分布状态的工作物质是如何产生激光的呢？激光谐振腔又起什么作用呢？下面就来回答这些问题。
如前所述，处于激发态的原子不能长时间停留在高能级。即使没有外界作用，也会自发地由高能级向低能级跃迁，并辐射一个光子。因为原子的这种自发辐射是完全独立的，所以，不同原子发射光子的方向全然不同。刹那间，工作物质中出现沿四面八方传播的光子，如图所示。
http://img.hc360.com/laser/Info/images/20051415270818.gif
假定工作物质具有圆柱形状，这些自发辐射光子必有一部分沿其中心轴的方向传播，多数则与中心轴有一定夹角。后一类“离心离德”的光子很快从工作物质的侧面逃逸出去，对激光的产生没有多大影响；前一类“同心同德”的光子在沿工作物质中心轴方向运动时，将引起路径上处于高能级原子的受激辐射，产生与其具有相同频率、相同位相，并沿相同方向传播的光子。该光子与诱发它的光子“齐心协力，并肩战斗”，激励其他原子辐射与它们相同的光子。如此下去，使光子数由1到2，由2到4，……以神奇的速度按指数规律增长。更为神奇的是，由于所有这些光子都是逐次受激辐射产生的，这使它们全部具有相同频率、相同初位相、相同偏振态，并沿相同方向传播，如图1-2（b）所示。
理论上讲，只要工作物质足够长，则不管初始自发辐射有多弱，最终总可以被放大到一定强度。但在实际激光器中，一般来说，工作物质既没有必要，也没有可能特别长（最近发展起来的以光纤为工作物质的激光器是一个例外），通常的做法是在其两端各放一块反射镜，使光得以来回反射多次通过工作物质并被不断放大，如图1-2（c）所示。为充分利用光能，介质往往被置于一聚光腔体中，后者与端面反射镜共同构成激光谐振腔，如图1-2（d）所示。
由以上的讨论可以看出，激光作为一种光，与自然界其他发光一样，是由原子（或分子、离子等）跃迁产生的，而且是由自发辐射引起的。不同的是，普通光源自始至终都是由自发辐射产生的，因而含有不同频率（或不同波长、不同颜色）的成分，并向各个方向传播。激光则仅在最初极短的时间内依赖于自发辐射，此后的过程完全由受激辐射决定。正是这一原因，使激光具有非常纯正的颜色，几乎无发散的方向性，极高的发光强度。而正是这些神奇的特性，使激光在各个领域具有一系列令人难以置信而又不得不相信的应用。
很多人都在追求美容方法，但是很多时候大家都不知道采用什么方法让自己更快的美容，于是多功能激光美容仪是大家都想找寻的，但是很多人对多功能激光美容仪不是很熟悉，下面就为大家介绍下多功能激光美容仪半导体激光器原理。
多功能激光美容仪半导体激光器原理
现代多功能激光美容仪应用于美容皮肤科学的治疗领域，是近年来我国皮肤科专业内突破性的发展之一，在短短的十年左右时间，激光技术已经形成了一套较完整的理论体系和临床实践，成为美容皮肤科主要的治疗手段之一。
多功能激光美容仪的发展大致经历了三个阶段：
基础研究阶段(20世纪60年代)：第一台有意义的激光器是1960年由Maiman引入临床的，它包括一根红宝石并能发射波长为694nm的激光。1961年有人将红宝石激光用于对剥离的视网膜进行焊接1963年，Goldman L开始将红宝石激光应用于良性皮肤损害和纹身治疗并取得成功。1965年Goldman 报道使用红宝石激光有效去除纹身而治疗后非常轻松没有瘢痕之后应用ND:YAG激光来消除纹身及治疗表浅血管畸形。1968年上海研制Nd:YAG激光。
临床使用阶段(20世纪70年代)：1970年Goldman L等人首次用连续CO2激光治疗基底细胞癌和皮肤血管瘤，由于连续的提供有效的激光功率和能量密度，克服了早期脉冲激光功率低、效率低的缺点，从而掀起了国内外首次激光以医疗的热潮。
发展成熟阶段(20世纪90年代)：90年代初期应用Q开关激光治疗色素性疾病如：太田痣、纹身等已取得了近乎完美的治疗效果90年代中、后期可变脉宽532nm激光治疗血管性疾病也取得了较好的疗效。此时，美国、以色列、德国等国先进成套的激光美容仪迅速引进国内，并趋向普及，一些国产的`激光美容仪在国内也得到了越来越多的应用并逐步取代外国产品的领先地位。
多功能激光美容仪半导体激光器原理掌握清楚很重要，这种方法其实对美容是很有效果的，很多人都采用这种仪器来让自己的变得更加的美丽。但是很多人在采用多功能激光美容仪让自己皮肤变好的时候，会出现很多错误，所以需谨慎。
欢迎分享，转载请注明来源：内存溢出
微信扫一扫
支付宝扫一扫
评论列表（0条）