其他的在下面这些应该找的到。
1、 应用Web和MATLAB的信号与系统基础（第二版）
作者:（美）Edward Kamen, Bonnie Heck, Ed Kamen
2、CMOS 射频集成电路设计(英文版）
作者:美Lee,T.H.著
3、MATLAB原理与工程应用
作者:（美）Edward B.Magrab
4、CDMA 蜂窝移动通信与网络安全
作者:韩-曼扬里
5、 电路（第六版）
作者:（美）James W.Nilsson Susan A.Riedel
6、电子学原理
作者:美Krenz,J.H.
7、逻辑电路设计基础
作者:美Marcovitz A.B
8、射频电路设计--理论与应用
作者:美Ludwig,R.
9、CDMA蜂窝移动通信与网络安全（英文原版）
作者:（韩）Man Young Rhee
10、工程电路分析(第六版)英文原版
作者:美 Hay T,W.H.等
11、光纤通信（第三版）
作者:（美）Gerd Keiser
12、实时信号处理——信号处理系统的设计与实现
作者:（美）John G.Ackenhusen
13、数字图像处理(第二版)英文版
作者美)Rafael C.Gonzalez Richard E.Woods
14、小波与傅里叶分析基础(英文版)
作者:美 Boggess,A
15、自适应滤波器原理(第四版)英文原版
作者:美 Haykin,S.著
16、CMOS模拟电路设计：第二版（英文版）
作者:（美）Phillip E.Allen Douglas R.Holberg
17、第三代移动通信系统原理与工程设计—IS-95 CDMA和cdma2000（英文版）
作者:（美）Vijay K.Garg
18、现代无线通信系统电波传播（英文版）
作者:（美）Henry L.Bertoni
19、数字通信——基础与应用（第二版）英文版
作者:（美）Bernard Sklar
20、半导体器件电子学(英文版)
作者:美 Grung,B.L.著
21、 数字集成电路设计(英文版)
作者:Martin,K.著
22、数字信号处理频谱计算与滤波器设计(英文版)
作者:美 Chi-Tsong Chen著
23、现代通信光电子学(第五版)英文版
作者:美 Yariv,A.著
24、信号处理滤波器设计(英文版)
作者utovac,M.D. Dejan V.Tosic Brian L.Evans
25、信号与系统(第二版)英文版
作者:（美）Alan V.Oppenheim Alan S.Willsky S.Hamid Nawab
26、线性电路分析基础（第二版）英文版
作者:（美）Leonard S.Bobrow
27、VHDL数字系统设计（英文版）
作者:（英）Mark Zwolinski
28、射频与微波电子学（英文版）
作者:美 Radmanesh,M.M.著
29、电子通信系统(第四版)
作者美)Wayne Tomasi
30、宽带无线数字通信
作者奥)Andreas F.Molisch
31、LabVIEW 6i实用教程
作者:Robert H.Bishop
32、 电路基础（英文版）
作者:（美）James W.Nilsson Susan A.Riedel
33、非线性光纤光学原理及应用
作者:（美）Govind P.Agrawal
34、数字信号处理基础
作者:（加）Joyce Van de Vegte
35、微电子制造科学原理与工程技术
作者:（美）Stephen A.Campbell
36、专用集成电路（英文版）
作者:（美）Michael John Sebastian Smith
37、电磁波理论
作者:（美）Jin Au Kong
38、无线通信调制与编码(英文版)
作者英)Alister Burr
39、微电子制造科学原理与工程技术（第二版 英文版）
作者:（美）Stephen A.Campbell
40、硅超大规模集成电路工艺技术：理论、实践与模型（英文版）
作者:（美）James D.Plummer Michael D.Deal Peter B.Griffin
41、通信系统（第四版 英文版）
作者:（加）Simon Haykin
42、统计与自适应信号处理
作者:（美）Dimitris G.Manolakis Vinay K.Ingle Stephen M.Kogon
43、 视频处理与通信
作者:Yao Wang,Jorn Ostermann,Ya-Qin Zhang
44、自适应滤波器原理（第四版）
作者:[美]Simon Haykin
45、信号与系统（第二版•英文版）
作者:[美]Barry Van Veen，[加]Simon Haykin
46、数字信号处理实践方法（第二版•英文版）
作者:[英]Emmanuel C.Ifeachor,Barrie W.Jervis
47、高速数字设计（英文版）
作者:[美]Howard Johnson,Martin Graham
48、统计信号处理基础——估计与检测理论
作者:[美]Steven M.Kay
49、 电子通信系统（第四版）（英文版）
作者:[美]Wayne Tomasi
50、 数字信号处理系统分析与设计（英文版）
作者aulo S.R.Diniz,Eduardo A.B.da SilvaSergio L.Netto
51、 数字电路简明教程
作者:[美]Robert D.Thompson
52、低压低功耗CMOS/BiCMOS超大规模集成电路
作者:[新加坡]Kiat-Seng Yeo,Samir S.Rofail,Wang-Ling Goh
53、宽带无线数字通信（英文版）
作者:[奥]Andreas F.Molisch
54、信号与系统（第二版）
作者:[美]Simon Haykin
55、通信系统（第四版）
作者:（加）Simon Haykin
56、超大规模集成电路与系统导论
作者:（美）John P.Uyemura
57、调制、检测与编码
作者:（瑞典）Tommy Oberg
58、通信系统工程（第二版）（英文版）
作者:（美）John G.Proakis，Masoud Salehi
59、半导体制造技术
作者:[美]Michael Quirk,Julian Serda
60、专用集成电路
作者:（美）Michael John Sebastian Smith
61、信号处理滤波器设计——基于MATLAB和Mathematica的设计方法
作者:Miroslav D.Lutovac,Dejan V.Tosic,Brian L.Evans
62、电子电路设计基础（英文版）
作者:（美）Richard R.Spencer,Mohammed S.Ghausi
63、无线通信原理与应用（第二版）（英文版）
作者:[美]Theodore S.Rappaport
64、数字设计（第三版）
作者:[美]M.Morris Mano
65、信息论与编码理论（第二版）
作者:[美]Robert J.McEliece出版日期:2004-2-1
66、 Verilog HDL 高级数字设计（英文版）
作者:（美）Michael D.Ciletti
67、天线（第三版）（上册）
作者:（美）John D. Kraus, Ronald J. Marhefka
68、片上系统——可重用设计方法学（第三版）
作者:[美]Michael Keating,Pierre Bricaud
69、工程电磁学（第6版）
作者:[美]William H.Hayt,Jr.John A.Buck
70、高速数字设计
作者:[美]Howard Johnson,Martin Graham
71、小波与傅里叶分析基础
作者:[美]Albert Boggess,Francis J.Narcowich
72、高级电子通信系统（第六版）
作者:[美]Wayne Tomasi
73、无线通信与移动通信中信号处理研究的新进展
作者:（美）Georgios B.Giannakis,Yingbo Hua,Petre Stoica,Lang Tong
74、数字信号处理系统分析与设计
作者aulo S.R.Siniz,Eduardo A.B.da Silva,Sergio L.Netto
75、VHDL数字系统设计（第二版）
作者:（英）Mark Zwolinski
76、电子电路设计
作者:（美）David Comer,Donald Comer
77、无线通信与网络
作者:（美）Jon W.Mark,Weihua Zhuang
78、CMOS射频集成电路设计
作者:（美）Thomas H.Lee
79、自适应滤波算法与实现（第二版）
作者:（英）Paulo S.R.Diniz
80、Verilog HDL数字设计与综合（第二版）
作者:（美）Samir Palnitkar
81、 半导体器件基础
作者:（美）Robert F. Pierret
82、数字信号处理实践方法（第二版）
作者:（英）Emmanuel C. Ifeachor,Barrie W. Jervis
83、微系统设计
作者:（美）Stephen D. Senturia
84、数字集成电路——电路、系统与设计（第二版）
作者:（美）Jan M.Rabaey,Anantha Chandrakasan,Borivoje Nikolic
出版日期:2004-10-1
85、现代通信光电子学（第5版）
作者:（美）Amnon Yariv
86、 芯片制造——半导体工艺制程实用教程（第四版）
作者:（美）Peter Van Zant
87、数字信号处理实验指导书（MATLAB版）
作者:（美）Sanjit K. Mitra
88、数字信号处理——基于计算机的方法（第二版）
作者:（美）Sanjit K. Mitra
89、集成电路器件电子学（第三版）
作者:（美）Richard S.Muller,Theodore I.Kamins,Mansun Chan
90、数字图像处理（MATLAB版）
作者:（美）Rafael C.Gonzalez,Richard E.Woods,Steven L.Eddins
91、 微电子电路（第五版）（上册）
作者:（美）Adel S.Sedra,Kenneth C.Smith
92、先进半导体存储器——结构、设计与应用
作者:（美）Ashok K.Sharma
93、CMOS数字集成电路——分析与设计（第三版）
作者:（美）Sung-Mo Kang,Yusuf Leblebici
94、信号与系统——连续与离散（第四版）
作者:（美）Rodger E.Ziemer,William H.Tranter, D.Ronald Fannin
95、Verilog HDL高级数字设计
作者:（美）Michael D.Ciletti
96、电路（第七版）（英文影印版）(电路领域的经典之作，美欧“电路”课程采用最为广泛的教材)
作者:（美）James W.Nilsson,Susan A.Riedel
97、合成孔径雷达图像处理
作者:（法）Henri Maitre
98、CMOS模拟集成电路设计（第二版）
作者:（美）Phillip E.Allen,Douglas R.Holberg
99、信号处理引论
作者:（美）James H. McClellan等
100、信号完整性分析
作者:（美）Eric Bogatin
In addition to improvements in chip performance, the shell packaging technology is also a great breakthrough, IR inversion in the development of field-effect transistor, also known as "FlipFET" on the basis of this year introduced the DirectFET, as shown in Figure 6. Its source and gate inversion result can be directly welded in the printed circuit board, the drain at the top of the weld metal in its shell, if necessary, by the radiator or direct contact with the equipment enclosure. DirectFET size equivalent to the traditional SO-8 plastic (plastic with an area of about 4x5 mm2) shell. In such a small device, the first structure of a double-sided cooling. It is a lead frame, no-lead solder joints of the device, it brought about a series of advantages: it's non-resistor chip package (DFPR) is only 0. 1mW, device thickness of only 0. 7mm, resistance and parasitic inductance have dropped significantly. Such characteristics make it especially suitable for the above-mentioned computer of the latest generation of CPU. In the multi-phase circuits, each with only two of 30 security DirectFET can transfer current. Increase its current rate of 400 per delicate security, the working frequency of 1-2 MHz.Secondly, you must be focused on power semiconductor devices in the IC direction: as a result of the development of MOSFET and IGBT, and their matching to provide a trigger signal power integrated circuit PIC (Power IC) have also developed rapidly. At that time, also known as MOS gate drive MGD (MOS Gate Driver) or control integrated circuit CIC (Control IC). With the expansion of the scope of application: such as motor drives, lighting, various power supply and so on, CIC of the cultivars have been rapidly increasing. These CIC in the development process
And gradually from a simple function to trigger the special needs of a wide range of applications development. PIC is the earliest that can be used in high voltage IC, therefore, also known as high-voltage IC (HVIC). However, many applications such as communications, computers, portable power supply and so on, they do not require high voltage, but demand for the special needs of the development of application specific integrated circuit. Because of their combination and application of power semiconductor devices, we have the power to include them in a class of semiconductor devices. So now the power semiconductor devices in the family, there are many integrated circuits. Many of these power devices with integrated circuits inside, some outside while the separation of power devices. Judging from this point, the limits of power and microelectronics has become increasingly blurred. If a large number of computer applications in power modulation device voltage LDO (Low Drop Out) is one example. It does not belong to switch applications.
As a result of a large number of integrated circuits into the power semiconductor devices, which consider the power semiconductor integrated circuits and devices to do the same in the chip or device on the development of the natural line of thought. Done in the same chip, the original is the concept of power integrated circuits, but their power often relatively small. Done in the same package, easy to increase power capacity, a number of passive components is also possible to join, here often called multi-chip module (MCM).
IR last year iPOWIR developed is a typical multi-chip module. It will power devices to control the use of integrated circuits, or in combination with pulse-width modulation (PWM) integrated circuit, according to the needs of power supply design, using BGA packaging technology portfolio in the same device (as shown in Figure 7) . Multi-chip device that greatly simplifies the power supply design staff. Components reduces the number and percentage of the area, there has been a lot of performance improvement. iPOWIR development is considered DC-DC conversion of the future. But, in fact, a wide range of applications in other fields, as long as the requirements of further integration, MCM structure and will there will be more and more. Therefore, it is the power semiconductor devices important direction of development.
In the above presentation, the development of MOSFET has been referred to as 4C industry provides an important foundation. 4C industries which, at present it is the most active direction of the product. We can understand: in the communications, computer, consumer electronics and automotive development, will require many, many close contacts and IC of all types of power semiconductor devices. Each of these aspects can be used to introduce a lot of space. Not detailed here.
Add: Conclusion
To sum up, the power semiconductor devices the past few years, constantly changed a lot. So can no longer look at a fixed vision of the development of power semiconductor devices. For example, not simply thyristor power semiconductor devices and an equal sign painting, or drawing an equal sign and discrete devices. Must not power semiconductor devices and microelectronics artificially separated, it seems only semiconductor microelectronics. These will impede the development of power semiconductor devices, in the long run will hinder the development of microelectronic devices. Development strategy in order to avoid the power semiconductor devices as a simple process only to be completed on the low-tech products. And the preferential policies available only to integrated circuit industry. China has not been very good to the development of modern power semiconductor devices, the lack of modern power semiconductor devices is a comprehensive understanding of the factors I am afraid. Information technology to stimulate industrialization in the wave, it is imperative that different semiconductor devices have a balanced development.
Conclusion
To sum up, the power semiconductor devices the past few years, constantly changed a lot. So can no longer look at a fixed vision of the development of power semiconductor devices. For example, not simply thyristor power semiconductor devices and an equal sign painting, or drawing an equal sign and discrete devices. Must not power semiconductor devices and microelectronics artificially separated, it seems only semiconductor microelectronics. These will impede the development of power semiconductor devices, in the long run will hinder the development of microelectronic devices. Development strategy in order to avoid the power semiconductor devices as a simple process only to be completed on the low-tech products. And the preferential policies available only to integrated circuit industry. China has not been very good to the development of modern power semiconductor devices, the lack of modern power semiconductor devices is a comprehensive understanding of the factors I am afraid. Information technology to stimulate industrialization in the wave, it is imperative that different semiconductor devices have a balanced development.
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