CCGA Ceramic Column Grid Array 陶瓷焊柱阵列
CLCC Ceramic Leaded Chip Carrier 带引脚的陶瓷片式载体
CML Current Mode Logic 电流开关逻辑
CMOS Complementary Metal-Oxide-Semiconductor 互补金属氧化物半导体
COB Chip on Board 板上芯片
COC Chip on Chip 叠层芯片
COG Chip on Glass 玻璃板上芯片
CSP Chip Size Package 芯片尺寸封装
CTE Coefficient of Thermal Expansion 热膨胀系数
CVD Chemical Vapor Depositon 化学汽相淀积
DCA Direct Chip Attach 芯片直接安装
DFP Dual Flat Package 双侧引脚扁平封装
DIP Double In-Line Package 双列直插式封装
DMS Direct Metallization System 直接金属化系统
DRAM Dynamic Random Access Memory 动态随机存取存贮器
DSO Dual Small Outline 双侧引脚小外形封装
DTCP Dual Tape Carrier Package 双载带封装
3D Three-Dimensional 三维
2D Two-Dimensional 二维
EB Electron Beam 电子束
ECL Emitter-Coupled Logic 射极耦合逻辑
FC Flip Chip 倒装片法
FCB Flip Chip Bonding 倒装焊
FCOB Flip Chip on Board 板上倒装片
FEM Finite Element Method 有限元法
FP Flat Package 扁平封装
FPBGA Fine Pitch Ball Grid Array 窄节距BGA
FPD Fine Pitch Device 窄节距器件
FPPQFP Fine Pitch Plastic QFP 窄节距塑料QFP
GQFP Guard-Ring Quad Flat Package 带保护环的QFP
HDI High Density Interconnect 高密度互连
HDMI High Density Multilayer Interconnect 高密度多层互连
HIC Hybird Integrated Circuit 混合集成电路
HTCC High Temperature Co-Fired Ceramic 高温共烧陶瓷
HTS High Temperature Storage 高温贮存
IC Integrated Circuit 集成电路
IGBT Insulated Gate Bipolar Transistor 绝缘栅双极晶体管
ILB Inner-Lead Bond 内引脚焊接
I/O Input/Output 输入/输出
IVH Inner Via Hole 内部通孔
JLCC J-Leaded Chip Carrier J形引脚片式载体
KGD Known Good Die 优质芯片
LCC Leadless Chip Carrier 无引脚片式载体
LCCC Leadless Ceramic Chip Carrier 无引脚陶瓷片式载体
LCCP Lead Chip Carrier Package 有引脚片式载体封装
LCD Liquid Crystal Display 液晶显示器
LCVD Laser Chemical Vapor Deposition 激光化学汽相淀积
LDI Laser Direct Imaging 激光直接成像
LGA Land Grid Array 焊区阵列
LSI Large Scale Integrated Circuit 大规模集成电路
LOC Lead Over Chip 芯片上引线健合
LQFP Low Profile QFP 薄形QFP
LTCC Low Temperature Co-Fired Ceramic 低温共烧陶瓷
MBGA Metal BGA 金属基板BGA
MCA Multiple Channel Access 多通道存取
MCM Multichip Module 多芯片组件
MCM-C MCM with Ceramic Substrate 陶瓷基板多芯片组件
MCM-D MCM with Deposited Thin Film Inteconnect Substrate 淀积薄膜互连基板多芯片组件
MCM-L MCM with Laminated Substrate 叠层基板多芯片组件
MCP Multichip Package 多芯片封装
MELF Metal Electrode Face Bonding 金属电极表面健合
MEMS Microelectro Mechanical System 微电子机械系统
MFP Mini Flat Package 微型扁平封装
MLC Multi-Layer Ceramic Package 多层陶瓷封装
MMIC Monolithic Microwave Integrated Circuit 微波单片集成电路
MOSFET Metal-Oxide-Silicon Field-Effect Transistor 金属氧化物半导体场效应晶体管
MPU Microprocessor Unit 微处理器
MQUAD Metal Quad 金属四列引脚
MSI Medium Scale Integration 中规模集成电路
OLB Outer Lead Bonding 外引脚焊接
PBGA Plastic BGA 塑封BGA
PC Personal Computer 个人计算机
PFP Plastic Flat Package 塑料扁平封装
PGA Pin Grid Array 针栅阵列
PI Polymide 聚酰亚胺
PIH Plug-In Hole 通孔插装
PTF Plastic Leaded Chip Carrier 塑料有引脚片式载体
PTF Polymer Thick Film 聚合物厚膜
PWB Printed Wiring Board 印刷电路板
PQFP Plastic QFP 塑料QFP
QFJ Quad Flat J-leaded Package 四边J形引脚扁平封装
QFP Quad Flat Package 四边引脚扁平封装
QIP Quad In-Line Package 四列直插式封装
RAM Random Access Memory 随机存取存贮器
SBB Stud-Bump Bonding 钉头凸点焊接
SBC Solder-Ball Connection 焊球连接
SCIM Single Chip Integrated Module 单芯片集成模块
SCM Single Chip Module 单芯片组件
SLIM Single Level Integrated Module 单级集成模块
SDIP Shrinkage Dual Inline Package 窄节距双列直插式封装
SEM Sweep Electron Microscope 电子扫描显微镜
SIP Single In-Line Package 单列直插式封装
SIP System In a Package 系统级封装
SMC Surface Mount Component 表面安装元件
SMD Surface Mount Device 表面安装器件
SMP Surface Mount Package 表面安装封装
SMT Surface Mount Technology 表面安装技术
SOC System On Chip 系统级芯片
SOIC Small Outline Integrated Circuit 小外形封装集成电路
SOJ Small Outline J-Lead Package 小外形J形引脚封装
SOP Small Outline Package 小外形封装
SOP System On a Package 系统级封装
SOT Small Outline Transistor 小外形晶体管
SSI Small Scale Integration 小规模集成电路
SSIP Small Outline Single-Line Plug Package 小外形单列直插式封装
SSOP Shrink Small Outline Package 窄节距小外形封装
SPLCC Shrinkage Plasitc Leadless Chip Carrier 窄节距塑料无引脚片式载体
STRAM Selftimed Random Access Memory 自定时随机存取存贮器
SVP Surface Vertical Package 立式表面安装型封装
TAB Tape Automated Bonding 载带自动焊
TBGA Tape BGA 载带BGA
TCM Thermal Conduction Module 热导组件
TCP Tape Carrier Package 带式载体封装
THT Through-Hole Technology 通孔安装技术
TO Transistor Outline 晶体管外壳
TPQFP Thin Plastic QFP 薄形塑料QFP
TQFP Tape QFP 载带QFP
TSOP Thin SOP 薄形SOP
TTL Transistor-Transistor Logic 晶体管-晶体管逻辑
UBM Metalization Under Bump 凸点下金属化
UFPD Ultra Small Pitch Device 超窄节距器件
USOP Ultra SOP 超小SOP
USONF Ultra Small Outline Package Non Fin 无散热片的超小外形封装
UV Ultraviolet 紫外光
VHSIC Very High Speed Integrated Circuit 超高速集成电路
VLSI Very Large Scale Integrated Circuit 超大规模集成电路
WB Wire Bonding 引线健合
WLP Wafer Level Package 圆片级封装
WSI Wafer Scale Integration 圆片级规模集成
Also known as laser diode laser diode (LD). Into the 1980s, it absorbed the physical development of the semiconductor up-to-date results, the use of quantum well (QW) and strained quantum well (SL-QW) structures, such as novelty, the introduction of the refractive index modulation Bragg launchers, as well as to enhance Bragg modulation transmitter The latest technology, as well as the development of the MBE, MOCVD and the CBE, such as crystal growth technology of the new technology, making new epitaxial growth technology to precisely control crystal growth to the accuracy of atomic layer thick, high-quality growth of quantum wells, as well as strained quantum well materials. As a result, production of the LD, the current threshold of a significant decline in conversion efficiency has been greatly improved the power output doubled, significantly longer service life.A low-power LD
In the field of information technology for the rapid development of low-power LD. For example, for fiber-optic communications and optical switching systems distributed feedback (DFB) and the dynamic single-mode LD, narrow linewidth tunable DFB-LD, such as CD-ROM for information processing technology in the field of visible light Wavelength (such as wavelength of 670nm, 650nm, 630nm The blue-green to red) LD, surface-emitting quantum well, as well as ultra-short laser pulses substantive, which are all treated the development of LD. The development of these devices are: narrow-linewidth single-frequency, high-speed, as well as short-wavelength tunable optical and integrated single-chip, and so on.
B high-power LD
In 1983, a single wavelength of 800nm output power LD more than 100mW, to 1989, 0.1mm-wide LD be reached 3.7W continuous output, and 1cm linear array LD has reached 76W output, the conversion efficiency of 39%. In 1992, the Americans also targets to a new level: 1cm linear array LD CW output power up to 121W, the conversion efficiency of 45%. Now, the output power of 120W, 1500W, 3kW and many other high-power LD have been published. High-efficiency, high power LD array and its rapid development for all-solid-state laser, diode laser that is pumped (LDP) of the rapid development of solid-state laser provides strong.
In recent years, in order to adapt to the EDFA and the EDFL, and other needs of the wavelength of 980nm high-power LD is that there is great development. Fiber Bragg Grating with recently selected frequency for filtering, a significant improvement in the stability of its output, pump effectively improve the efficiency.
And the characteristics of the application: semiconductor diode laser is the most important practical for a class of lasers. Its small size, long life, and a simple injection of current-pumped his way to work with the voltage and current circuit-compatible, which can be integrated with a single. And also can be as high as GHz frequency modulation direct current for high-speed modulation of laser output. As a result of these advantages, the semiconductor diode laser in the laser communications, optical storage, optical gyros, laser printing, as well as radar range, and so on, as well as access to a wide range of applications.
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