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标题翻译如下

CCD image sensor and their application study。

内容翻译如下

Promptness accompanying semiconductor and the photoelectricity technology develops , the solid state image sensor also arises at the historic moment , the productive technology technology can't develop swift and violent. The solid state image sensor is compared with average image sensor , have volume lacking fidelity for a short time, for a short time, sensitiveness is high , resist to vibrate , is able to bear moistness , a lot of merit of cost low grade, therefore can broad apply to industry measurement, is that meticulous of our country processes , development of robot technology and industrial automation field gets the significant effect under the control of, especially waiting for a field in pattern recognition, and with the branch who seeps through each that the industry and agriculture in our country produces broadly. At the same time, computer soft hardware technology never-ending changes and improvements, application that can give a solid state image a sensor also brings about vast vistas. The principle the main body of a book is complied with analysing the solid state image sensor starts off , emphasizes analysis and investigation and discussion being in progress to it in test control and the pattern recognition field.

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Power semiconductor devices and power electronics

World's first semiconductor rectifier and the transistor is, when no power semiconductor or microelectronics semiconductor division. In 1958, China began the first research topic Thyristor (originally known as PNPN device). In similar time, the study of integrated circuits began gradually. From semiconductor devices to the two direction. The former became the basis for power electronics, while the latter led to the development and micro-electronics and information electronics.

According to the system, power system devices are classified to the machinery, integrated circuits, electronic systems are included. As the semiconductor leader in the electronic systems, coupled with the semiconductor integrated circuits is the main body, which after a long-term evolution of integrated circuits in a number of occasions, has become almost synonymous with semiconductor devices only.

At the end of the sixties and early seventies, the country has set off a "SCR" hot. The boom continued a long time, great influence, and therefore still believe that the domestic power of semiconductors is the main SCR. The late seventies, the development of a thyristor family. And called the name of a standardized "thyristor." As the technology to regulate the power switch, so the wear and tear on a small device, so as the energy trump card. Its application is to cover all fields. China was first mooted in 1979, the establishment of Power Electronics Society, IEEE slightly earlier than the establishment of the United States Institute of Power Electronics (Power Electronics Society). Power Electronics Society of China was founded, as a result of the importance of professional development is very rapid. However, because the focal point was the relationship, it does not like the United States become an independent professional institutes, and was subsequently set up part of the China Electrotechnical Society.

The translation and definition of Power Electronics for Power Electronics (the original idea was also known as the Power Electronics), and the popularity of power electronics played a role. Mechanical, electrical, electronic and other departments are very concerned about its development. Related to the power semiconductor devices has also been known as the power electronic devices. However, this name is very difficult to find abroad, but the corresponding terms. "Electricity" in reference to electronic access to universal, but also left a number of sequels. People mistakenly believe that only high-power direction is the "power" of the main electronic devices, and the difficulty of the rapid development of the MOSFET as a "power electronics" of the other main. From that point, I would like to use power semiconductor devices as the subject of this article, and power electronic devices can be used to express a broader sense to include other non-semiconductor, including a variety of power electronic devices.

The development of power semiconductor devices in three stages

The development of power semiconductor devices can be divided into three stages. The first stage is 60 to the seventies, when the various types of thyristors and power transistors Darlington significant development, or what might be called the era of bipolar. Its clients are mainly for industrial applications, including power systems, such as locomotive traction. The second stage is 80 to the nineties, due to the rise of the power MOSFET to power electronics into a new area. Modern 4C booming industry: the Communication, Computer, Consumer, Car (communication, computer, consumer electronics, automobiles) to provide a new vitality. Before and after the twenty-first century, the development of power semiconductor devices have entered the third phase, that is, and integrated circuit combined with a growing stage, Figure 1 and Figure II made to the above description of a simple sum. Of course, first of all need to focus on that here is this: when the continuous development of power semiconductor devices, the previous stage has not been the dominant product from the stage of history. For example, SCR is still an important product. China has in recent years the introduction of ultra-high-power thyristor, thyristor-controlled technology, such as China's major power transmission project, providing a key device. Recently, in considering the introduction of IGCT technology. In this regard it should be said that has gradually moved towards the world. This is our country going on the many major infrastructure. Although the view from the United States, the production of high-power thyristors have been less and less on the economic development of the two countries are not identical. I draw in Figure 2 in power semiconductor devices in both directions in the development. The left side of the bipolar nature of the direction toward the integration of ultra-high-power and direction. The right direction is unipolar, it is more established and integrated circuits of the inseparable relationship between closely.

1. Semiconductor laser also known as laser diodes (LD). Into the 1980s, people absorb the semiconductor development of the latest achievements in physics, using a quantum well (QW) and strained quantum well (SL-QW), and other new structures, the introduction of index modulation Bragg launchers and enhanced modulation Bragg launchers The latest technology, and also the development of the MBE, MOCVD and the CBE, and other new technology of crystal growth, making the new epitaxial growth technology to precisely control the crystal growth, to achieve the precision of atomic layers thick, high-quality grown quantum wells and strained quantum well materials. Thus, to create the LD, the threshold current significant drop significantly improve the conversion efficiency, output power have increased significantly lengthen life.

2. Optoelectronics, the rapid development mainly based on quantum mechanics and materials science in the development, with particular attention is the development of optoelectronic semiconductors. LED, LD Shenqi these electronic devices is the result of this development, particularly the recent development of the organic photoelectric materials, and more is great to promote the progress of the photoelectric materials.

Why is the first semiconductor LED »

When the electronic conduction band jumped from the top to enter the zone at the time, a certain loss of energy, the energy becomes a photon emission out, is popular to say that the luminescence. Oh:) semiconductor laser is a direct bandgap semiconductor materials constitute the PN junction of material or PIN entered into a small laser. Semiconductor laser work of dozens of substances, has made laser Jia arsenide semiconductor material (GaAs), arsenic Gu (InAs), gallium nitride (GaN), antimony and Gu (InSb), curing the pot (cds), hoof-fu (CdTe), lead selenide (PbSe), tellurium and lead (PhTe ), Al Jia arsenic (A1xGa, -, As), Gu phosphorus arsenic (In-PxAS), and so on. Semiconductor laser incentive There are three main ways, that is, people-Note, optical pump-and-high-energy electron beam incentives. The vast majority of Semiconductor laser is the way of incentives, Notes, or to Pn guitar and forward voltage, so that the guitar in a regional plane stimulated emission, that is a positive bias of the diodes, also known as the semiconductor laser diode laser diode . On the semiconductor, electronics is due in the transition between the band, rather than in discrete energy levels between the transition, the transition energy is not a set value, which makes semiconductor laser output wavelength distribution in a very broad The scope. They issued by the wavelength of between 0.3-34um. Wavelength range of its decision on the materials used by the band gap, the most common is AlGaA: double-heterojunction laser, the output wavelength of 750 - 890nm. The world On the first semiconductor laser is available in 1962, after several decades of research, semiconductor laser achieved a surprising development, and its infrared wavelengths from the red light green to blue, gradually expanding the scope covered, the performance Parameters also have greatly increased their production by the proliferation of technology has to LPE Law Act (LPE), extension of gas (VPE), MBE Act (MBE), MOCVD method (metal organic compounds vapor deposition) , Chemical beam epitaxy (CBE) and their various combined, and other technology. Lasing closure of its current value from a few hundred mA down to a few dozen mA, until the sub-mA, its life expectancy by a few hundred to tens of thousands of hours, and 1 million hours from the initial low-temperature (77 K) under development to operate at room temperature for work, the power output by several milliwatts to kilowatts level (Array) it has a high efficiency, small size, light weight, simple structure, can Power for the direct conversion of laser energy, high power conversion efficiency (has reached more than 10 per cent, up to 50 per cent). Facilitate direct modulation, power-saving advantages, applications growing. At present, the fixed-wavelength laser diode to use the number of Habitat All of the first laser, the application of certain important areas over the past used the other lasers, has gradually been replaced by a semiconductor laser.

Semiconductor Laser is the biggest drawback: laser properties affected by temperature, the beam divergence angle greater (in general several times to 20 degrees), so in the direction and coherence of monochrome and other poor areas. But with the With the rapid development of science and technology, the semiconductor laser-depth study positive direction, the performance of semiconductor laser continuously improve. Semiconductor laser power can reach very high level, and beam quality has been greatly improved. Semiconductor laser as to The core semiconductor photonics technology in the 21st century information society will make more progress, play a bigger role.

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