半导体的英语翻译 半导体用英语怎么说

semi-conductor

英['semɪkənd'ʌktər]美['semɪkənd'ʌktər]

n.半导体

[例句]A semi-conductor has some important properties.

半导体有一些重要的特性。

就是手芯片生的量及散出去。要不然致芯片

半导体散热器是由半导体所组成的一种散热装置，于1960年左右才出现，然而其理论基础可追溯到19世纪。

这现象最早是在1821年，由一位德国科学家ThomasSeeback首先发现，不过他当时做了错误的推论，并没有领悟到背后真正的科学原理。

半导体散热片本身是通过消耗电能来提高热量传输速度的东西。分冷面和热面，通过消耗电能来将冷面的热量传递到热面。热面的发热量比较大，所以要保障有一定的散热能力。热面温度越高，冷面的降温效率越低，最后有可能导致整个半导体散热片被熔毁。

一般有些散热器它是有一种半导体功能的，就是将散热器类装入水，然后它的水就会自动凝结成小冰珠附着在手机背面上，但是这种是不会给手机造成任何进水或者危害的。

因为他毕竟是小冰猪，而且他是散热器散发出来的，它已经极大的溶解掉了水中的有机成分，只留下一些水蒸气，而水蒸气的密度非常的低，非常容易被融化。

手机散热器风冷好。手机“散热设备”内含有制冷晶片，合金散热柱，机身搭载5叶扇。原理是通电后风扇启动，两侧风道引流加持，让整个机身实现空气循环，来降温内部的制冷晶片，通过贴在手机背部的方式去逐渐降温。但不足的是制冷晶片本身背后大量的发热需要通过背部风扇排出，排风口正好就对着我的双手，机身过宽不方便使用，齐能达到2摄氏度。也是非常不错的手机散热器。

In addition to improvements in chip performance, the shell packaging technology is also a great breakthrough, IR inversion in the development of field-effect transistor, also known as "FlipFET" on the basis of this year introduced the DirectFET, as shown in Figure 6. Its source and gate inversion result can be directly welded in the printed circuit board, the drain at the top of the weld metal in its shell, if necessary, by the radiator or direct contact with the equipment enclosure. DirectFET size equivalent to the traditional SO-8 plastic (plastic with an area of about 4x5 mm2) shell. In such a small device, the first structure of a double-sided cooling. It is a lead frame, no-lead solder joints of the device, it brought about a series of advantages: it's non-resistor chip package (DFPR) is only 0. 1mW, device thickness of only 0. 7mm, resistance and parasitic inductance have dropped significantly. Such characteristics make it especially suitable for the above-mentioned computer of the latest generation of CPU. In the multi-phase circuits, each with only two of 30 security DirectFET can transfer current. Increase its current rate of 400 per delicate security, the working frequency of 1-2 MHz.

Secondly, you must be focused on power semiconductor devices in the IC direction: as a result of the development of MOSFET and IGBT, and their matching to provide a trigger signal power integrated circuit PIC (Power IC) have also developed rapidly. At that time, also known as MOS gate drive MGD (MOS Gate Driver) or control integrated circuit CIC (Control IC). With the expansion of the scope of application: such as motor drives, lighting, various power supply and so on, CIC of the cultivars have been rapidly increasing. These CIC in the development process

And gradually from a simple function to trigger the special needs of a wide range of applications development. PIC is the earliest that can be used in high voltage IC, therefore, also known as high-voltage IC (HVIC). However, many applications such as communications, computers, portable power supply and so on, they do not require high voltage, but demand for the special needs of the development of application specific integrated circuit. Because of their combination and application of power semiconductor devices, we have the power to include them in a class of semiconductor devices. So now the power semiconductor devices in the family, there are many integrated circuits. Many of these power devices with integrated circuits inside, some outside while the separation of power devices. Judging from this point, the limits of power and microelectronics has become increasingly blurred. If a large number of computer applications in power modulation device voltage LDO (Low Drop Out) is one example. It does not belong to switch applications.

As a result of a large number of integrated circuits into the power semiconductor devices, which consider the power semiconductor integrated circuits and devices to do the same in the chip or device on the development of the natural line of thought. Done in the same chip, the original is the concept of power integrated circuits, but their power often relatively small. Done in the same package, easy to increase power capacity, a number of passive components is also possible to join, here often called multi-chip module (MCM).

IR last year iPOWIR developed is a typical multi-chip module. It will power devices to control the use of integrated circuits, or in combination with pulse-width modulation (PWM) integrated circuit, according to the needs of power supply design, using BGA packaging technology portfolio in the same device (as shown in Figure 7) . Multi-chip device that greatly simplifies the power supply design staff. Components reduces the number and percentage of the area, there has been a lot of performance improvement. iPOWIR development is considered DC-DC conversion of the future. But, in fact, a wide range of applications in other fields, as long as the requirements of further integration, MCM structure and will there will be more and more. Therefore, it is the power semiconductor devices important direction of development.

In the above presentation, the development of MOSFET has been referred to as 4C industry provides an important foundation. 4C industries which, at present it is the most active direction of the product. We can understand: in the communications, computer, consumer electronics and automotive development, will require many, many close contacts and IC of all types of power semiconductor devices. Each of these aspects can be used to introduce a lot of space. Not detailed here.

Add: Conclusion

To sum up, the power semiconductor devices the past few years, constantly changed a lot. So can no longer look at a fixed vision of the development of power semiconductor devices. For example, not simply thyristor power semiconductor devices and an equal sign painting, or drawing an equal sign and discrete devices. Must not power semiconductor devices and microelectronics artificially separated, it seems only semiconductor microelectronics. These will impede the development of power semiconductor devices, in the long run will hinder the development of microelectronic devices. Development strategy in order to avoid the power semiconductor devices as a simple process only to be completed on the low-tech products. And the preferential policies available only to integrated circuit industry. China has not been very good to the development of modern power semiconductor devices, the lack of modern power semiconductor devices is a comprehensive understanding of the factors I am afraid. Information technology to stimulate industrialization in the wave, it is imperative that different semiconductor devices have a balanced development.

Conclusion

To sum up, the power semiconductor devices the past few years, constantly changed a lot. So can no longer look at a fixed vision of the development of power semiconductor devices. For example, not simply thyristor power semiconductor devices and an equal sign painting, or drawing an equal sign and discrete devices. Must not power semiconductor devices and microelectronics artificially separated, it seems only semiconductor microelectronics. These will impede the development of power semiconductor devices, in the long run will hinder the development of microelectronic devices. Development strategy in order to avoid the power semiconductor devices as a simple process only to be completed on the low-tech products. And the preferential policies available only to integrated circuit industry. China has not been very good to the development of modern power semiconductor devices, the lack of modern power semiconductor devices is a comprehensive understanding of the factors I am afraid. Information technology to stimulate industrialization in the wave, it is imperative that different semiconductor devices have a balanced development.

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