DS1245W_内存溢出

技术

DS1245W 3.3V 1024k非易失SRAM

DS1245W 3.3V 1024k非易失SRAM为1,048,576位、全静态非易失SRAM，按照8位、131,072字排列。每个NV SRAM均自带锂电池及控制电路，控制电路连续监视VCC是否超出

视在功率计算
2022-8-2
30 0 0 0

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DS1245W 3.3V 1024k非易失SRAM