如何选用稳压二极管?

稳压二极管，英文名：Zener diode，又叫齐纳二极管，是一种用特殊工艺制造而成的面结型硅半导体二极管，它的外形、内部结构与普通二极管相似。稳压二极管伏安特性曲线的正向特性和普通二极管差不多，反向特性是在反向电压低于反向击穿电压时，反向电阻很大，反向漏电流极小。但是，当反向电压临近反向电压的临界值时，反向电流骤然增大，称为击穿，在这一临界击穿点上，反向电阻骤然降至很小值。尽管电流在很大的范围内变化，而二极管两端的电压却基本上稳定在击穿电压附近，从而实现了二极管的稳压功能。

稳压二极管伏安特性

稳压二极管根据额定功耗分，有：

1）1W：1N4728A-Z1330A（DO-41封装）、SMA4728A-SZ1330A（SMA/DO-214AC封装）、SML4728A-SMZ1330A（SOD-123）；

2）1.5W：1N5919B-1N5956B（DO-41封装）、SMA5919B-SMA5956B（SMA/DO-214AC封装）；

3）2W：2EZ5.6D5-2EZ330D5（DO-15封装）、SMB2EZ5.6D5-SMB2EZ330D5（SMB/DO-214AA封装）；

4）3W：3EZ5.6D5-3EZ200D5（DO-15封装）、SMB3EZ5.6D5- SMB3EZ200D5（SMB/DO-214AA封装）；

5）5W：1N5338B-1N5388B（DO-201封装）、SMC5338B-SMC5388B（SMC/DO-214AB封装）；

面对如此多的系列，该如何选择？接下来分享：稳压二极管选型。

1）稳压二极管的稳压值离散性很大，即使同一厂家同一型号产品，其稳定电压值也不完全一样，这一点在选用时应加以注意。对要求较高的电路，选用前应对稳压值进行检测。

2）对于过电压保护的稳压二极管，其稳定电压的选定要依据保护电压的大小选用，其稳定电压值不能选得过大或过小，否则起不到电压保护的作用。

3）在选用稳压二极管时，除了要注意稳定电压、最大工作电流等参数外，还要注意选用动态电阻较小的稳压二极管，因为动态电阻越小，稳压性能越好。

4）使用稳压管时应注意，二极管的反向电流不能无限增大，否则会导致二极管的过热损坏。因此，稳压管在电路中一般需要串联限流电阻。

5）选用稳压二极管时，要根据具体电子电路来考虑，简单的并联稳压电源，输出电压就是稳压二极管的稳定电压。

稳压二极管

Power semiconductor devices and power electronics

World's first semiconductor rectifier and the transistor is, when no power semiconductor or microelectronics semiconductor division. In 1958, China began the first research topic Thyristor (originally known as PNPN device). In similar time, the study of integrated circuits began gradually. From semiconductor devices to the two direction. The former became the basis for power electronics, while the latter led to the development and micro-electronics and information electronics.

According to the system, power system devices are classified to the machinery, integrated circuits, electronic systems are included. As the semiconductor leader in the electronic systems, coupled with the semiconductor integrated circuits is the main body, which after a long-term evolution of integrated circuits in a number of occasions, has become almost synonymous with semiconductor devices only.

At the end of the sixties and early seventies, the country has set off a "SCR" hot. The boom continued a long time, great influence, and therefore still believe that the domestic power of semiconductors is the main SCR. The late seventies, the development of a thyristor family. And called the name of a standardized "thyristor." As the technology to regulate the power switch, so the wear and tear on a small device, so as the energy trump card. Its application is to cover all fields. China was first mooted in 1979, the establishment of Power Electronics Society, IEEE slightly earlier than the establishment of the United States Institute of Power Electronics (Power Electronics Society). Power Electronics Society of China was founded, as a result of the importance of professional development is very rapid. However, because the focal point was the relationship, it does not like the United States become an independent professional institutes, and was subsequently set up part of the China Electrotechnical Society.

The translation and definition of Power Electronics for Power Electronics (the original idea was also known as the Power Electronics), and the popularity of power electronics played a role. Mechanical, electrical, electronic and other departments are very concerned about its development. Related to the power semiconductor devices has also been known as the power electronic devices. However, this name is very difficult to find abroad, but the corresponding terms. "Electricity" in reference to electronic access to universal, but also left a number of sequels. People mistakenly believe that only high-power direction is the "power" of the main electronic devices, and the difficulty of the rapid development of the MOSFET as a "power electronics" of the other main. From that point, I would like to use power semiconductor devices as the subject of this article, and power electronic devices can be used to express a broader sense to include other non-semiconductor, including a variety of power electronic devices.

The development of power semiconductor devices in three stages

The development of power semiconductor devices can be divided into three stages. The first stage is 60 to the seventies, when the various types of thyristors and power transistors Darlington significant development, or what might be called the era of bipolar. Its clients are mainly for industrial applications, including power systems, such as locomotive traction. The second stage is 80 to the nineties, due to the rise of the power MOSFET to power electronics into a new area. Modern 4C booming industry: the Communication, Computer, Consumer, Car (communication, computer, consumer electronics, automobiles) to provide a new vitality. Before and after the twenty-first century, the development of power semiconductor devices have entered the third phase, that is, and integrated circuit combined with a growing stage, Figure 1 and Figure II made to the above description of a simple sum. Of course, first of all need to focus on that here is this: when the continuous development of power semiconductor devices, the previous stage has not been the dominant product from the stage of history. For example, SCR is still an important product. China has in recent years the introduction of ultra-high-power thyristor, thyristor-controlled technology, such as China's major power transmission project, providing a key device. Recently, in considering the introduction of IGCT technology. In this regard it should be said that has gradually moved towards the world. This is our country going on the many major infrastructure. Although the view from the United States, the production of high-power thyristors have been less and less on the economic development of the two countries are not identical. I draw in Figure 2 in power semiconductor devices in both directions in the development. The left side of the bipolar nature of the direction toward the integration of ultra-high-power and direction. The right direction is unipolar, it is more established and integrated circuits of the inseparable relationship between closely.

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