功率半导体器英文翻译

The power semiconductor device and the micro electron

power semiconductor device is in the semiconductor device important link, it and the micro electron component relations is close, because the micro electron component required power semiconductor device forms a complete set provides its power source and the execution system.If develops rapidly computer, when CPU from 286,486, to gallops I, II, III, IV…When development, to took the power source the power semiconductor request increasingly is also harsh.For example the present is developing the voltage to be smaller than 1 volt, on the electric current hundred amperes power sources, this must develop the newest MOSFET component to be able to meet the needs.In order to achieve these renew unceasingly the performance index, the power semiconductor device must use the micro electron component similar fine craft.This will also be this article is detailed narrates.

The power semiconductor device and the integrated circuit close union, in the one has arranged in order four aspects in the chart: Namely

1) power and micro electron component in chip manufacture craft already day by day close: The power MOS component in order to achieve a better performance, for example requests to pass condition the resistance lowly, its craft already from 20 year ago several microns technologies rapidly to submicron even deep submicron development.This and the micro electron component development is consistent.

2) the MOS component seal technology is also approaching to the integrated circuit.These for years, the power MOS component has used has inverted (Flip) likely, ball grid array (BGA) and packing forms and so on multi-chip module (MCM).These all are the quite new integrated circuit packing forms.

3) looked from the component structure that, makes the power MOS component and the integrated circuit in the identical chip perhaps the identical packing, is one of recent development directions.Therefore the power semiconductor device equates simply for established separately the component no longer to be appropriate.Take the IR Corporation product as the example, the power integrated circuit, perhaps and IC does in the same place power component, as well as the special advanced component, held its product one above the half.

4) the comprehensive solution (Total Solution) is each kind of component finally conceives.Seeks the component the function integrity, in the solution application all questions is the component manufacturer's ideal.Had the integrated circuit to enter the power semiconductor device, this kind of comprehensive solution plan was easier to realize.Not only to the low power direction is so, even the high efficiency direction is also pursuing a greater integration rate and the comprehensive solution.Certainly, contains all functions by a component not necessarily forever is the preferred plan.For example must consider the rate of finished products the loss, but also must pay attention to the protection customer to develop the electric circuit on own initiative the enthusiasm.

简介：

东微半导体成立于2008年，注册资本3520万元，专注半导体器件技术创新，拥有多项功率半导体核心专利，核心产品为中低高压功率器件。

东微半导体拥有世界一流的技术研发团队，其原创半浮栅技术曾发表于国际顶级杂志《Science》。东微半导体致力于自主知识产权的半导体器件技术的研发和产业化，是“长三角集成电路设计与制造协同创新中心”的核心成员单位。公司已有50多项发明专利，包括3个美国专利，有多项自主知识产权的国际原创核心器件技术。

2016年3月，东微半导体成为国内首个成功量产充电桩核心芯片的厂商。

法定代表人：龚轶

成立日期：1221148800

注册资本：4425.143万元人民币

所属地区：江苏省

统一社会信用代码：91320594680506522G

经营状态：在业

所属行业：制造业

公司类型：有限责任公司

英文名：

人员规模：50-99人

企业地址：苏州工业园区金鸡湖大道99号苏州纳米城西北区20栋405、406室

经营范围：半导体器件、集成电路、芯片、半导体耗材、电子产品的设计、开发、销售、进出口业务及相关技术咨询和技术服务。(依法须经批准的项目,经相关部门批准后方可开展经营活动)

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