功率半导体英文翻译

In addition to improvements in chip performance, the shell packaging technology is also a great breakthrough, IR inversion in the development of field-effect transistor, also known as "FlipFET" on the basis of this year introduced the DirectFET, as shown in Figure 6. Its source and gate inversion result can be directly welded in the printed circuit board, the drain at the top of the weld metal in its shell, if necessary, by the radiator or direct contact with the equipment enclosure. DirectFET size equivalent to the traditional SO-8 plastic (plastic with an area of about 4x5 mm2) shell. In such a small device, the first structure of a double-sided cooling. It is a lead frame, no-lead solder joints of the device, it brought about a series of advantages: it's non-resistor chip package (DFPR) is only 0. 1mW, device thickness of only 0. 7mm, resistance and parasitic inductance have dropped significantly. Such characteristics make it especially suitable for the above-mentioned computer of the latest generation of CPU. In the multi-phase circuits, each with only two of 30 security DirectFET can transfer current. Increase its current rate of 400 per delicate security, the working frequency of 1-2 MHz.

Secondly, you must be focused on power semiconductor devices in the IC direction: as a result of the development of MOSFET and IGBT, and their matching to provide a trigger signal power integrated circuit PIC (Power IC) have also developed rapidly. At that time, also known as MOS gate drive MGD (MOS Gate Driver) or control integrated circuit CIC (Control IC). With the expansion of the scope of application: such as motor drives, lighting, various power supply and so on, CIC of the cultivars have been rapidly increasing. These CIC in the development process

And gradually from a simple function to trigger the special needs of a wide range of applications development. PIC is the earliest that can be used in high voltage IC, therefore, also known as high-voltage IC (HVIC). However, many applications such as communications, computers, portable power supply and so on, they do not require high voltage, but demand for the special needs of the development of application specific integrated circuit. Because of their combination and application of power semiconductor devices, we have the power to include them in a class of semiconductor devices. So now the power semiconductor devices in the family, there are many integrated circuits. Many of these power devices with integrated circuits inside, some outside while the separation of power devices. Judging from this point, the limits of power and microelectronics has become increasingly blurred. If a large number of computer applications in power modulation device voltage LDO (Low Drop Out) is one example. It does not belong to switch applications.

As a result of a large number of integrated circuits into the power semiconductor devices, which consider the power semiconductor integrated circuits and devices to do the same in the chip or device on the development of the natural line of thought. Done in the same chip, the original is the concept of power integrated circuits, but their power often relatively small. Done in the same package, easy to increase power capacity, a number of passive components is also possible to join, here often called multi-chip module (MCM).

IR last year iPOWIR developed is a typical multi-chip module. It will power devices to control the use of integrated circuits, or in combination with pulse-width modulation (PWM) integrated circuit, according to the needs of power supply design, using BGA packaging technology portfolio in the same device (as shown in Figure 7) . Multi-chip device that greatly simplifies the power supply design staff. Components reduces the number and percentage of the area, there has been a lot of performance improvement. iPOWIR development is considered DC-DC conversion of the future. But, in fact, a wide range of applications in other fields, as long as the requirements of further integration, MCM structure and will there will be more and more. Therefore, it is the power semiconductor devices important direction of development.

In the above presentation, the development of MOSFET has been referred to as 4C industry provides an important foundation. 4C industries which, at present it is the most active direction of the product. We can understand: in the communications, computer, consumer electronics and automotive development, will require many, many close contacts and IC of all types of power semiconductor devices. Each of these aspects can be used to introduce a lot of space. Not detailed here.

Add: Conclusion

To sum up, the power semiconductor devices the past few years, constantly changed a lot. So can no longer look at a fixed vision of the development of power semiconductor devices. For example, not simply thyristor power semiconductor devices and an equal sign painting, or drawing an equal sign and discrete devices. Must not power semiconductor devices and microelectronics artificially separated, it seems only semiconductor microelectronics. These will impede the development of power semiconductor devices, in the long run will hinder the development of microelectronic devices. Development strategy in order to avoid the power semiconductor devices as a simple process only to be completed on the low-tech products. And the preferential policies available only to integrated circuit industry. China has not been very good to the development of modern power semiconductor devices, the lack of modern power semiconductor devices is a comprehensive understanding of the factors I am afraid. Information technology to stimulate industrialization in the wave, it is imperative that different semiconductor devices have a balanced development.

Conclusion

To sum up, the power semiconductor devices the past few years, constantly changed a lot. So can no longer look at a fixed vision of the development of power semiconductor devices. For example, not simply thyristor power semiconductor devices and an equal sign painting, or drawing an equal sign and discrete devices. Must not power semiconductor devices and microelectronics artificially separated, it seems only semiconductor microelectronics. These will impede the development of power semiconductor devices, in the long run will hinder the development of microelectronic devices. Development strategy in order to avoid the power semiconductor devices as a simple process only to be completed on the low-tech products. And the preferential policies available only to integrated circuit industry. China has not been very good to the development of modern power semiconductor devices, the lack of modern power semiconductor devices is a comprehensive understanding of the factors I am afraid. Information technology to stimulate industrialization in the wave, it is imperative that different semiconductor devices have a balanced development.

The power semiconductor device and the micro electron

power semiconductor device is in the semiconductor device important link, it and the micro electron component relations is close, because the micro electron component required power semiconductor device forms a complete set provides its power source and the execution system.If develops rapidly computer, when CPU from 286,486, to gallops I, II, III, IV…When development, to took the power source the power semiconductor request increasingly is also harsh.For example the present is developing the voltage to be smaller than 1 volt, on the electric current hundred amperes power sources, this must develop the newest MOSFET component to be able to meet the needs.In order to achieve these renew unceasingly the performance index, the power semiconductor device must use the micro electron component similar fine craft.This will also be this article is detailed narrates.

The power semiconductor device and the integrated circuit close union, in the one has arranged in order four aspects in the chart: Namely

1) power and micro electron component in chip manufacture craft already day by day close: The power MOS component in order to achieve a better performance, for example requests to pass condition the resistance lowly, its craft already from 20 year ago several microns technologies rapidly to submicron even deep submicron development.This and the micro electron component development is consistent.

2) the MOS component seal technology is also approaching to the integrated circuit.These for years, the power MOS component has used has inverted (Flip) likely, ball grid array (BGA) and packing forms and so on multi-chip module (MCM).These all are the quite new integrated circuit packing forms.

3) looked from the component structure that, makes the power MOS component and the integrated circuit in the identical chip perhaps the identical packing, is one of recent development directions.Therefore the power semiconductor device equates simply for established separately the component no longer to be appropriate.Take the IR Corporation product as the example, the power integrated circuit, perhaps and IC does in the same place power component, as well as the special advanced component, held its product one above the half.

4) the comprehensive solution (Total Solution) is each kind of component finally conceives.Seeks the component the function integrity, in the solution application all questions is the component manufacturer's ideal.Had the integrated circuit to enter the power semiconductor device, this kind of comprehensive solution plan was easier to realize.Not only to the low power direction is so, even the high efficiency direction is also pursuing a greater integration rate and the comprehensive solution.Certainly, contains all functions by a component not necessarily forever is the preferred plan.For example must consider the rate of finished products the loss, but also must pay attention to the protection customer to develop the electric circuit on own initiative the enthusiasm.

Power56封装正确的称呼是DFN

5×6，JEDEC

MO-240规定了该封装的外形尺寸，厂商可以自行命名，例如Power56就是Farichild的称呼。

目前DFN

5×6是除DPAK之外最流行的功率半导体封装规格，因为封装面积跟常用的TSOP-8不相上下，而薄型封装又节约元件净空高度，底部Thermal-Pad设计降低了热阻，因此基本上很多功率器件厂商都部署了DFN

5×6，细数下来就很多了：

infineon的PG-T(S)DSON-8，Fairchild的Power56，Vishay的PowerPAK，意法半导体的PowerFLAT，ONSemi的SO8-FL，NECEL的HVSON8，Renesas的WPAK，ANPEC的KPAK，AOSemi的DFN

5×6，APEC的PMPAK，MagnaChip的PowerFLAT，UBIQ的DFN

5×6

DFN

5×6跟另一种薄型封装LFPAK外形上很相似，焊盘多数也“兼容”所以经常会被搞混，实际上DFN

5×6跟LFPAK的内连接工艺是不同的。目前还在坚守LFPAK的就只有NXP和Renesas了。

此答案如果满意请给分谢谢。

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