DS1250_内存溢出

技术

DS1250 4096k、非易失SRAM

DS1250 4096k、非易失SRAM为4,194,304位、全静态非易失SRAM，按照8位、524,288字排列。每个完整的NV SRAM均自带锂电池及控制电路，控制电路连续监视VCC是否超出容差

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DS1250 4096k、非易失SRAM