DS1230W_内存溢出

技术

DS1230W 3.3V 256k非易失SRAM

DS1230W 3.3V 256k非易失SRAM为262,144位、全静态非易失SRAM，按照8位、32,768字排列。每个NV SRAM自带锂电池及控制电路，控制电路连续监视VCC是否超出容差范围，

realtek瑞昱
2022-8-2
39 0 0 0

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DS1230W 3.3V 256k非易失SRAM