功率半导体器文章英文翻译

Power semiconductor devices and power electronics

World's first semiconductor rectifier and the transistor is, when no power semiconductor or microelectronics semiconductor division. In 1958, China began the first research topic Thyristor (originally known as PNPN device). In similar time, the study of integrated circuits began gradually. From semiconductor devices to the two direction. The former became the basis for power electronics, while the latter led to the development and micro-electronics and information electronics.

According to the system, power system devices are classified to the machinery, integrated circuits, electronic systems are included. As the semiconductor leader in the electronic systems, coupled with the semiconductor integrated circuits is the main body, which after a long-term evolution of integrated circuits in a number of occasions, has become almost synonymous with semiconductor devices only.

At the end of the sixties and early seventies, the country has set off a "SCR" hot. The boom continued a long time, great influence, and therefore still believe that the domestic power of semiconductors is the main SCR. The late seventies, the development of a thyristor family. And called the name of a standardized "thyristor." As the technology to regulate the power switch, so the wear and tear on a small device, so as the energy trump card. Its application is to cover all fields. China was first mooted in 1979, the establishment of Power Electronics Society, IEEE slightly earlier than the establishment of the United States Institute of Power Electronics (Power Electronics Society). Power Electronics Society of China was founded, as a result of the importance of professional development is very rapid. However, because the focal point was the relationship, it does not like the United States become an independent professional institutes, and was subsequently set up part of the China Electrotechnical Society.

The translation and definition of Power Electronics for Power Electronics (the original idea was also known as the Power Electronics), and the popularity of power electronics played a role. Mechanical, electrical, electronic and other departments are very concerned about its development. Related to the power semiconductor devices has also been known as the power electronic devices. However, this name is very difficult to find abroad, but the corresponding terms. "Electricity" in reference to electronic access to universal, but also left a number of sequels. People mistakenly believe that only high-power direction is the "power" of the main electronic devices, and the difficulty of the rapid development of the MOSFET as a "power electronics" of the other main. From that point, I would like to use power semiconductor devices as the subject of this article, and power electronic devices can be used to express a broader sense to include other non-semiconductor, including a variety of power electronic devices.

The development of power semiconductor devices in three stages

The development of power semiconductor devices can be divided into three stages. The first stage is 60 to the seventies, when the various types of thyristors and power transistors Darlington significant development, or what might be called the era of bipolar. Its clients are mainly for industrial applications, including power systems, such as locomotive traction. The second stage is 80 to the nineties, due to the rise of the power MOSFET to power electronics into a new area. Modern 4C booming industry: the Communication, Computer, Consumer, Car (communication, computer, consumer electronics, automobiles) to provide a new vitality. Before and after the twenty-first century, the development of power semiconductor devices have entered the third phase, that is, and integrated circuit combined with a growing stage, Figure 1 and Figure II made to the above description of a simple sum. Of course, first of all need to focus on that here is this: when the continuous development of power semiconductor devices, the previous stage has not been the dominant product from the stage of history. For example, SCR is still an important product. China has in recent years the introduction of ultra-high-power thyristor, thyristor-controlled technology, such as China's major power transmission project, providing a key device. Recently, in considering the introduction of IGCT technology. In this regard it should be said that has gradually moved towards the world. This is our country going on the many major infrastructure. Although the view from the United States, the production of high-power thyristors have been less and less on the economic development of the two countries are not identical. I draw in Figure 2 in power semiconductor devices in both directions in the development. The left side of the bipolar nature of the direction toward the integration of ultra-high-power and direction. The right direction is unipolar, it is more established and integrated circuits of the inseparable relationship between closely.

4。氮化物半导体的导电控制4.1。蓝色发现的p -型导电交界的n氮化镓GaN和实现的P -发光二极管没有成功，许多团体试图制造p型氮化镓但。随着氮化镓晶体质量控制成功的，我们就可以开始工作，在p型掺杂。使用的LT - AlN缓冲层，密度氮化镓残余捐助也大幅下降如上所述。但在上尽管一再努力锌掺杂，它不可能产生p型氮化镓。 1987年，我们发现，发光强度锌有关的大量增加时，高品质的锌掺杂的GaN层与成长的LT - AlN缓冲了电子束照射在阴极发光（CL）的测量[21]。我们认为这种现象（称为电子束的影响）[21]可能是密切相关的传导与活化锌，因此与受体PTYPE的。但晶体并没有显示p型传导。与此同时，在1988年，我们注意到，可能是受体镁锌浅比，因为它的电是]大22比锌[。 1989年，我们成功地在镁掺杂高品质氮化镓使用镁掺杂Cp2Mg或MCP2Mg作为一个同时保持AlN缓冲层技术的高品质结晶使用的LT - [23]。然后镁掺杂GaN样品进行照射用电子束在掺杂样品一样的锌。我们发现效果大大提高电子束蓝色发光这些Mgdoped氮化镓样品（部门）以及低电阻率的样品是p型氮化镓[24]。随即，我们实现了世界上第一个氮化镓的p - n结蓝/紫外发光二极管令人鼓舞的I - V特性于1989年[24]，如图所示研究。 5。我们实现了p型氮化铝镓在1991年[25]和p型GaInN在1995年[26]以相同的方式。 1992年，PTYPE的氮化镓也产生Mgdoped氮化镓铝热退火成长与缓冲层，中村等的LT - GaN的。 [27]。后来，p型氮化镓紫外得到[28]或电磁波辐射[29,30] 400集成电路在高温下。为了实现p型氮化物，就必须激活[31镁受体释放氢气，32]。但是，我们首先要大幅度降低钝化受体的剩余供氢之前解决相关的问题。

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