半导体代工厂里做蚀刻的工程师可以解释一下etch bias的概念吗?

半导体代工厂里做蚀刻的工程师可以解释一下etch bias的概念吗?,第1张

楼上的不知道不要扯淡好吗?etch bias是指刻蚀后的CD减去刻蚀前的CD的bias值,也就是ETCH CD-PHOTO CD.

CD bias可以表征刻蚀量和刻蚀均一性。是生产过程中非常重要的数据参数

Input bias current

输入偏压电流

On top of that is the user " brightness " adjustment , which adjusts the bias currents to all tubes at the same time

此后就是用户使用的“亮度”调整了,此项同时对三只管子的偏置电流进行调整。

Again , consider using amppfiers that exhibit a *** ooth input bias current transition throughout the appped input mon - mode voltage

再者,所用的放大器也要考虑在加到输入端的整个共模电压(范围内)输入偏置电流转换保持平滑。

The g2 adjustment is a service or factory level adjustment , normally only done at the factory or at installation , which adjusts the bias current for each tube individually so that they all e on at the same time

每一只投影管都需要一定量的偏置电流才能够正常工作,然而,每只管及其相应的电路参数都会有些差异,因此所需的偏置电流也不太一样。

The results of numerical simulation show that for various kinds of noise without modulation the anti - noise properties and the output quapty of laser can be improved by selecting appropriately bias current and parameters of the cavity

数值模拟的结果表明,对于无调制时的各种噪声,适当选取偏置电流和腔内参数可以提高微腔半导体激光器的抗噪声性能或激光输出的质量。

To reduce power dissipation of the amppfier , a kind of on / off technology is used in the circuit . with a pttle bias current circuit to control the main bipolar transistor operation , the transistor will be in a state of on / off

采用器件旁路小电流工作电路,实现对低噪声放大器主要工作晶体管的控制,使该晶体管按需要分别处于工作或关断状态,保证了放大器的极低功耗。

Second , since input bias currents are not always *** all and can exhibit different polarities , source impedance levels should be carefully matched to minimize additional input bias current - induced offset voltages and increased distortion

其次,因为输入偏置电流不一定都小,且可能体现不同的极性,而且源阻抗水平应该仔细地进行匹配,以将输入偏置电流引起额外失调电压和增加的畸变减到最小。

And a novel systematically method , using pnear bination approach to design high order filter , has been proposed . the designed filters can be adapted by adjusting the bias currents , without changing the physical structure . the results of the examples and pspice simulator show the advantages and availabipties of this method

并且提出了多项式线性组合法,采用该方法不但能设计出所要求的高阶电流滤波器,而且能在不改变物理结构的情况下,利用电流控制传送器的特性,调整其偏置电流,实现滤波器输出特性的改变。

The results that increasing of bias current and shunted resistance and lowing critical current and connected inductance can decrease the tran *** ission time are shown ( 4 ) a new type of circuit , ladder shape multiplayer jtl . structure is provided by author , thus output signal of rsfq circuits can be amppfied before transfer to room temperature electronics system . it has highly gain of amppfy relatively and the double peak structure are avoided through decreasing parasitic capacitance

( 4 )针对目前超导与室温接口电路的电压放大器存在的“双峰”和放大增益效率较低的不足,提出了一种全新的阶梯式多层jtl电压放大电路结构,较好的解决了以上的问题,通过初步的仿真分析证实,该电路的构思极负有创新性。

The bias magic field of the bias coil driven by bias current and *** all signal test current , results in the induced signal of the control coil . the terminal voltage of the control coil is detected by the test circuit . then the signal containing the information of rotor displacement is obtained , from which we can get the dc voltage signal proportional to the rotor displacement through half - wave rectification circuit and low pass circuit . this dc signal is put into a pid controller to get the control signal of the rotor displacement

偏置测试电路向偏置线圈输入偏置电流和小信号测试电流,两者产生的偏置磁场在控制线圈产生感应信号,检测电路检测控制线圈端电压并提取含有转子位移信息的电压信号,该信号经半波整流电路和低通滤波电路后得到与转子位移成正比例的直流信号,再由pid控制器转换为转子位移的控制信号,最后控制信号输入功放电路产生控制电流,实现闭环控制。

For phoic signal modulation , if the pass band range of the band pass filter ( bpf ) is 300hz - 3400hz , the anti - noise properties of laser are approximately independent of bias current and parameters of the cavity when the pass band range of bpf increases to a certain degree , modulating bias current and parameters of the cavity can improve the anti - noise properties of laser

对语音调制情况,如带通滤波器的通带范围取为300hz - 3400hz ,则激光器的抗噪声性能基本不依赖于偏置电流和腔内参数;当带通滤波器的通带范围增大到一定程度,调整偏置电流和腔内参数可以实现半导体激光器的高抗噪声性能。

Subcircuit models are designed and simulated , which includes bias current source , voltage reference , error amppfier , pwm parator , driver circuit , protection circuits for over - temperature , over - current . at last , bined with periphery ponent , the circuit is simulated , and the result meets the anticipant requirement

并对集成电路内的各个模块包括电流偏置电路、基准电压电路、误差放大电路、三角波振荡发生电路、 pwm比较电路、驱动电路、过热保护电路和过流保护等进行了具体的设计和仿真,并对整体应用电路进行了仿真,结果均达到了预先设定的指标。

As a mix - mode chip , the apppcation - specific controller including *** og signal and digital signal processing block can be appped to receiving , amppfying , processing , controlpng signals of pir , and offer a wide apppcation in some fields . in *** og circuits , by sub - threshold mosfet , a self - bias current source is presented , which has a high power supply restrain ratio and a plementary to absolute temperature characters

这款芯片是一款数模混合芯片,包括模拟信号处理(含模数接口模块)和数字信号处理两大模块,完整实现对红外信号的接收、放大、处理、控制,产生有效数字电平驱动继电器、可控硅等负载,应用于自动灯等多种场合。

By changing the negative bias current density , gaseous ratio and total pressure , nanocrystalpne diamond film is prepared by ion - assisted bombardment method at the substrate temperature of 700 ? 00 ? and mixture gaseous of ch4 and h2 the effect of growth parameters on the diamond film is studied . the diamond film presents very low pressive stress and excellent field emission character

采用离子辅助轰击法,以ch _ 4 、 h _ 2为源气,衬底温度为700 900 ,通过改变衬底负偏压、 h _ 2和ch _ 4气体比例以及工作气压,制备出纳米金刚石薄膜,并对工艺参数对金刚石薄膜沉积的影响进行了研究。

The chip can be widely used in mp3 player , pda , digital camera , cells phone and portable products etc . this thesis first introduces the basic theory of switching power supply . the operating theory of this circuit has been demonstrated . the operating principle and simulation *** ysis about band gap reference , self - biased current source , one shot circuit , hysteresis parator , and current - pmit circuit have been particularly expounded in this thesis

本文首先阐述了开关电源的工作原理,详细介绍了本电路的整体工作原理,最后重点介绍了自偏置电流源电路、基准源电路、单稳态触发器电路、峰值电流限制及低电池电压迟滞比较器的工作原理,并利用eda工具larker ? ams 、 hspice对电路进行了完整的设计和模拟仿真,给出了合理的电路数据,各子模块电路的电特性参数均达到或优于设计所需指标。

The thesis has done the widespread investigation and study to the domestic and foreign ’ s technologies of *** ogy low voltage and low power , and *** yzes the principles of work , merts and shortings of these technologies , based on the absorption of these technologies , it designs a 1 . 5v low power rail - to - rail cmos operational amppfier . when designing input stage , in order to enable the input mon mode voltage range to achieve rail - to - rail , it does not use the traditional differential input pair , but use the nmos tube and the pmos tube parallel supplementary differential input pair to the structure , and uses the proportional current mirror technology to reapze the constant transconductance of input stage . in the middle gain stage design , the current mirror load does not use the traditional standard cascode structure , but uses the low voltage , wide - swing casecode structure which is suitable to work in low voltage . when designing output stage , in order to enhance the efficiency , it uses the push - pull mon source stage amppfier as the output stage , the output voltage swing basically reached rail - to - rail . the thesis changes the design of the traditional normal source based on the operational amppfier , uses the differential amppfier with current mirror load to design a normal current source . the normal current source provides the stable bias current and the bias voltage to the operational amppfier , so the stabipty of operational amppfier is guaranteed . the thesis uses the miller pensate technology with a adjusting zero resistance to pensate the operational amppfier

本论文对国内外的模拟低电压低功耗技术做了广泛的调查研究,分析了这些技术的工作原理和优缺点,在吸收这些技术成果基础上设计了一个1 . 5v低功耗轨至轨cmos运算放大器。在设计输入级时,为了使输入共模电压范围达到轨至轨,不是采用传统的差动输入结构,而是采用了nmos管和pmos管并联的互补差动输入对结构,并采用成比例的电流镜技术实现了输入级跨导的恒定在中间增益级设计中,电流镜负载并不是采用传统的标准共源共栅结构,而是采用了适合在低压工作的低压宽摆幅共源共栅结构在输出级设计时,为了提高效率,采用了推挽共源级放大器作为输出级,输出电压摆幅基本上达到了轨至轨本论文改变传统基准源基于运放的设计,采用了带电流镜负载的差分放大器设计了一个基准电流源,给运放提供稳定的偏置电流和偏置电压,保证了运放的稳定性并采用了带调零电阻的密勒补偿技术对运放进行频率补偿。

Using finite element method , a calculation *** ysis on the magic field and hearing force of electromagic thrust hearings system , which was being arranged in various forms of structures under co - directional and inverse bias current conditions of input , was carried out by taking the system as an integral model , thus their variation low and factors of influence were rather distinctly brought to pght

摘要用有限元法对同向和反向偏流输入情况下,各种结构布置形式的电磁推力轴承系统,按整体模型进行磁场和承载力的计算分析,较清楚地揭示了它们的变化规律和影响因素。

Firstly , design the sofare phase - closed loops secondly , reapze the double closed loops control of the instantaneous value and the virtual value . furthermore , the dynamic flux imbalance of the output transformer caused by ordinary pi arithmetic is *** yzed in detail . a new solution for flux balance by samppng the instantaneous primary current of the output transformer and introducing the on - pne calculated bias current ponent into the voltage regulation arithmetic is presented

系统软件实现了ups的各个功能模块,首先设计了软件锁相环;然后实现了输出电压瞬时值和有效值双闭环反馈控制;并且在深入分析基本数字pi算法所引起的输出变压器动态偏磁问题的基础上,提出了一种改进算法,实时消除了变压器的偏磁。

However , the emission wavelength of a dfb - ld needs to be carefully turned on the predetermined wavelength grid by adjusting both laser temperature and bias current . furthermore , dfb - ld has such drawbacks as a relatively large variation of the lasing wavelength with ambient temperature ( ~ 0 . 1nm / c ) which restricts its apppcation in dwdm systems

然而dfb - ld的激射波长受温度( 0 . 1nm )和偏置电流的影响较大,只有通过调节dfb - ld的温度和偏置电流,其激射波长才能被调谐在预置的波长处。

The cmr materials have plex physical properties . some phenomena of the lacamno3 films are discussed , such as the effects of mi *** atch beeen the substrates and the films , the variation of the resistance of films under different bias currents . and the effects and improvements are discussed with details after the films are annealed in high temperature and high oxygen pressure

超巨磁电阻材料有着复杂的物理性质,我们对lacamno _ 3薄膜材料所表现出来的一些现象进行了讨论,如应力变化对薄膜性质的影响、不同偏置电流与薄膜电阻变化的关系等,还特别讨论了薄膜在高温、高氧压环境中退火所带来的影响以及薄膜性质的改善。

We apply the agrawal ' s theory model of soa , and study the temporal characteristics of the output pulse for input picosecond optical pulses with different sharpness edges passing through a semiconductor optical amppfier , and find that the peak power and the pulse width of the output pulse depend on the input pulse peak power , the sharpness degree of the input pulse edge and the bias current of soa

本文应用agrawal的关于soa理论模型,详细研究了具有不同陡峭边沿的皮秒超高斯光脉冲经soa后的时域特性的变化,发现输出脉冲的峰值功率、脉冲宽度与输入脉冲的峰值功率、输入脉冲边沿的陡峭程度以及soa的偏置电流密切相关。

The electro - chemical measurement system used to perform dpsv measurement is constructed with o parts , a low - current measurement system consists of low input bias current operational amppfier and a high resolution sar adc and a potentialstat consists of high resolution dac and high current buffer amppfier

对于微分脉冲伏安溶出测量,我们使用高精度高速saradc和低偏置电流运放构成微电流采样系统,使用高精度dac和高速大电流缓冲放大器设计了恒电位计,并与微控制器共通组成电化学测量系统。

In the fourth chapter , a fourth - order chebyshev low - pass filter employs new low voltage , highly pnear , wide inputting range transconductor is proposed , then we presents a new circuit to tune gm value of transconductor accurately , which employs a new switched - capacitor circuit to change the bias current of transconductor , a third order elpptical function low - pass filter with accurate tunable frequency has been designed using transconductor that is not only with voltage mon - mode negative feedback , but also with varying bias - triode transistors which can improve the pnearity of this circuit

第四章:提出了一种新的低电压、高线性度、宽输入范围跨导,并由此设计实现了四阶切比雪夫( chebyshev )低通滤波器,接着提出了一种宽输入范围且具有电压共模负反馈的全差分跨导,并采用一种新的开关电容电路实现跨导值gm精确可调,从而可以设计得到高性能具有精确截止频率的跨导-电容三阶椭圆函数滤波器。


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