功率半导体英文翻译

In addition to improvements in chip performance, the shell packaging technology is also a great breakthrough, IR inversion in the development of field-effect transistor, also known as "FlipFET" on the basis of this year introduced the DirectFET, as shown in Figure 6. Its source and gate inversion result can be directly welded in the printed circuit board, the drain at the top of the weld metal in its shell, if necessary, by the radiator or direct contact with the equipment enclosure. DirectFET size equivalent to the traditional SO-8 plastic (plastic with an area of about 4x5 mm2) shell. In such a small device, the first structure of a double-sided cooling. It is a lead frame, no-lead solder joints of the device, it brought about a series of advantages: it's non-resistor chip package (DFPR) is only 0. 1mW, device thickness of only 0. 7mm, resistance and parasitic inductance have dropped significantly. Such characteristics make it especially suitable for the above-mentioned computer of the latest generation of CPU. In the multi-phase circuits, each with only two of 30 security DirectFET can transfer current. Increase its current rate of 400 per delicate security, the working frequency of 1-2 MHz.

Secondly, you must be focused on power semiconductor devices in the IC direction: as a result of the development of MOSFET and IGBT, and their matching to provide a trigger signal power integrated circuit PIC (Power IC) have also developed rapidly. At that time, also known as MOS gate drive MGD (MOS Gate Driver) or control integrated circuit CIC (Control IC). With the expansion of the scope of application: such as motor drives, lighting, various power supply and so on, CIC of the cultivars have been rapidly increasing. These CIC in the development process

And gradually from a simple function to trigger the special needs of a wide range of applications development. PIC is the earliest that can be used in high voltage IC, therefore, also known as high-voltage IC (HVIC). However, many applications such as communications, computers, portable power supply and so on, they do not require high voltage, but demand for the special needs of the development of application specific integrated circuit. Because of their combination and application of power semiconductor devices, we have the power to include them in a class of semiconductor devices. So now the power semiconductor devices in the family, there are many integrated circuits. Many of these power devices with integrated circuits inside, some outside while the separation of power devices. Judging from this point, the limits of power and microelectronics has become increasingly blurred. If a large number of computer applications in power modulation device voltage LDO (Low Drop Out) is one example. It does not belong to switch applications.

As a result of a large number of integrated circuits into the power semiconductor devices, which consider the power semiconductor integrated circuits and devices to do the same in the chip or device on the development of the natural line of thought. Done in the same chip, the original is the concept of power integrated circuits, but their power often relatively small. Done in the same package, easy to increase power capacity, a number of passive components is also possible to join, here often called multi-chip module (MCM).

IR last year iPOWIR developed is a typical multi-chip module. It will power devices to control the use of integrated circuits, or in combination with pulse-width modulation (PWM) integrated circuit, according to the needs of power supply design, using BGA packaging technology portfolio in the same device (as shown in Figure 7) . Multi-chip device that greatly simplifies the power supply design staff. Components reduces the number and percentage of the area, there has been a lot of performance improvement. iPOWIR development is considered DC-DC conversion of the future. But, in fact, a wide range of applications in other fields, as long as the requirements of further integration, MCM structure and will there will be more and more. Therefore, it is the power semiconductor devices important direction of development.

In the above presentation, the development of MOSFET has been referred to as 4C industry provides an important foundation. 4C industries which, at present it is the most active direction of the product. We can understand: in the communications, computer, consumer electronics and automotive development, will require many, many close contacts and IC of all types of power semiconductor devices. Each of these aspects can be used to introduce a lot of space. Not detailed here.

Add: Conclusion

To sum up, the power semiconductor devices the past few years, constantly changed a lot. So can no longer look at a fixed vision of the development of power semiconductor devices. For example, not simply thyristor power semiconductor devices and an equal sign painting, or drawing an equal sign and discrete devices. Must not power semiconductor devices and microelectronics artificially separated, it seems only semiconductor microelectronics. These will impede the development of power semiconductor devices, in the long run will hinder the development of microelectronic devices. Development strategy in order to avoid the power semiconductor devices as a simple process only to be completed on the low-tech products. And the preferential policies available only to integrated circuit industry. China has not been very good to the development of modern power semiconductor devices, the lack of modern power semiconductor devices is a comprehensive understanding of the factors I am afraid. Information technology to stimulate industrialization in the wave, it is imperative that different semiconductor devices have a balanced development.

Conclusion

To sum up, the power semiconductor devices the past few years, constantly changed a lot. So can no longer look at a fixed vision of the development of power semiconductor devices. For example, not simply thyristor power semiconductor devices and an equal sign painting, or drawing an equal sign and discrete devices. Must not power semiconductor devices and microelectronics artificially separated, it seems only semiconductor microelectronics. These will impede the development of power semiconductor devices, in the long run will hinder the development of microelectronic devices. Development strategy in order to avoid the power semiconductor devices as a simple process only to be completed on the low-tech products. And the preferential policies available only to integrated circuit industry. China has not been very good to the development of modern power semiconductor devices, the lack of modern power semiconductor devices is a comprehensive understanding of the factors I am afraid. Information technology to stimulate industrialization in the wave, it is imperative that different semiconductor devices have a balanced development.

The power semiconductor device and the micro electron

power semiconductor device is in the semiconductor device important link, it and the micro electron component relations is close, because the micro electron component required power semiconductor device forms a complete set provides its power source and the execution system.If develops rapidly computer, when CPU from 286,486, to gallops I, II, III, IV…When development, to took the power source the power semiconductor request increasingly is also harsh.For example the present is developing the voltage to be smaller than 1 volt, on the electric current hundred amperes power sources, this must develop the newest MOSFET component to be able to meet the needs.In order to achieve these renew unceasingly the performance index, the power semiconductor device must use the micro electron component similar fine craft.This will also be this article is detailed narrates.

The power semiconductor device and the integrated circuit close union, in the one has arranged in order four aspects in the chart: Namely

1) power and micro electron component in chip manufacture craft already day by day close: The power MOS component in order to achieve a better performance, for example requests to pass condition the resistance lowly, its craft already from 20 year ago several microns technologies rapidly to submicron even deep submicron development.This and the micro electron component development is consistent.

2) the MOS component seal technology is also approaching to the integrated circuit.These for years, the power MOS component has used has inverted (Flip) likely, ball grid array (BGA) and packing forms and so on multi-chip module (MCM).These all are the quite new integrated circuit packing forms.

3) looked from the component structure that, makes the power MOS component and the integrated circuit in the identical chip perhaps the identical packing, is one of recent development directions.Therefore the power semiconductor device equates simply for established separately the component no longer to be appropriate.Take the IR Corporation product as the example, the power integrated circuit, perhaps and IC does in the same place power component, as well as the special advanced component, held its product one above the half.

4) the comprehensive solution (Total Solution) is each kind of component finally conceives.Seeks the component the function integrity, in the solution application all questions is the component manufacturer's ideal.Had the integrated circuit to enter the power semiconductor device, this kind of comprehensive solution plan was easier to realize.Not only to the low power direction is so, even the high efficiency direction is also pursuing a greater integration rate and the comprehensive solution.Certainly, contains all functions by a component not necessarily forever is the preferred plan.For example must consider the rate of finished products the loss, but also must pay attention to the protection customer to develop the electric circuit on own initiative the enthusiasm.

你好，IR是一个多义词，（共14个义项）

①.元素 铱 Iridium的缩写，

元素符号： Ir

英文名： Iridium

中文名： 铱化合价。

元素用途：

制造坩埚和特种容器，与锇共同用于制造金笔笔尖。作为合金成分，用于增大铂合金硬度，制造耐热合金和充当标准量具衡具的合金材料。

②.红外线

红外线Infrared Radiation，简称IR，是一种无线通讯方式，可以进行无线数据的传输。

自1974年以来，红外线通讯技术得到很普遍的应用，如红外线鼠标，红外线打印机，红外线键盘等等。

③.图像编辑软件ImageReady

ImageReady，简称IR。ImageReady是由Adobe公司开发的，以处理网络图形为主的图像编辑软件，是Adobe Photoshop附带的一个小的矢量软件。

利用ImageReady可以将Photoshop（简称PS）的图像 *** 作最优化，使其更适合网页设计，也可以通过分割图像自动制作HTML文档，还可以制作简单的GIF动画，它是专门的网络图像处理工具。

④.脉冲反应impulseresponse

脉冲反应是声学中用以反映事物混响特征的一种描述手段。

声源在发出声音以后，声波会在障碍物之间反射，于是声波彼此叠加便产生了混响。混响效果器的工作原理，就是拿源声音，与 impulse response 做卷积计算。

⑤.国际关系InternationalRelations

国际关系（英文：International Relations）是政治学的一个分支，研究国际社会之间的外交事务和关系，如国家、政府国际组织、非政府国际组织、跨国公司等。国际关系既是学术的领域，也是公共政策的领域。 简而言之，国际关系是指人们超越国家界限建立起来的一种特殊社会关系，它主要包括政治、经济、军事、社会等等关系。

⑥.IR指令寄存器

指令寄存器（IR ）用来保存当前正在执行的一条指令。当执行一条指令时，先把它从内存取到数据寄存器（DR）中，然后再传送至IR。指令划分为 *** 作码和地址码字段，由二进制数字组成。

⑦.国际整流器公司

国际整流器公司 (简称IR) 是全球功率半导体和管理方案领导厂商。IR 的模拟及混合信号集成电路、先进电路器件、集成功率系统和器件广泛应用于驱动高性能运算设备及降低电机的能耗 (电机乃全球最大之耗能设备) ，是众多国际知名厂商开发下一代计算机、节能电器、照明设备、汽车、卫星系统及宇航系统的电源管理基准。

⑧.胰岛素抵抗

胰岛素抵抗(Insulin Resistance，IR)是指胰岛素作用的靶器官对胰岛素作用的敏感性下降，即正常剂量的胰岛素产生低于正常生物学效应的一种状态。

⑨.增量冗余

增量冗余IncrementalRedundancy（IR）方案是带有软合并的HARQ合并方案中的一种。

⑩.国家代码

伊朗域名IR，

例如；伊朗（Iran） 例如中国是CN（China），美国是US（united states）

⑪.电信术语简称

IR , International Roaming.表示国际漫游。

⑫.信息检索

信息检索Information Retrieval是指信息按一定的方式组织起来，并根据信息用户的需要找出有关的信息的过程和技术。

⑬.中断请求触发器

中断请求触发器暂存中断请求线上由设备发出的中断请求信号。当IR标志为"1"时，表示设备发出了中断请求。

⑬.IR职位定义

投资者关系管理(Investor Relations Managementa，英文缩写为IRM)，有时也简称为投资者关系(Investor Relations，英文缩写为IR) 诞生于美国20世纪50年代后期，它包括上市公司（包括拟上市公司）与股东，债权人和潜在投资者之间的关系管理，也包括在与投资者沟通过程中，上市公司与资本市场各类中介机构之间的关系管理。

⑭.国际整流器公司

国际整流器公司 (简称IR) 是全球功率半导体和管理方案领导厂商。IR 的模拟及混合信号集成电路、先进电路器件、集成功率系统和器件广泛应用于驱动高性能运算设备及降低电机的能耗 (电机乃全球最大之耗能设备) ，是众多国际知名厂商开发下一代计算机、节能电器、照明设备、汽车、卫星系统及宇航系统的电源管理基准。

希望我的回答可以帮助到你。

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